A deposition mask according to an embodiment comprises a metal plate comprising a deposition area and a non-deposition area. The through-hole comprises a communicating portion connected to a first facing hole configured such that the first diameter slopes at an acute angle with regard to one surface in the transverse-axis direction of the metal plate, and a communicating portion connected to a second facing hole configured such that the first diameter slopes at an obtuse angle with regard to one surface in the transverse-axis direction of the deposition mask. In the longitudinal-axis direction of the metal plate, the first facing hole and the second facing hole are arranged alternately in a row. In the transverse-axis direction of the metal plate, the first facing hole and the second facing hole are arranged alternately in a row. A first island portion is arranged between two adjacent first facing holes in a first diagonal direction joining the first diameters of the communicating portions connected to the first facing holes. A second island portion is arranged between two adjacent second facing holes in a second diagonal direction joining the first diameters of the communicating portions connected to the second facing holes. A rib is arranged between the first island portion and the second island portion. The deviation in size between the first island portion and the second island portion, which are adjacent to each other, is 30% or less.

A display device and method for manufacturing the same. The display device includes an anode layer, hole injection layer, hole transport layer, light-emitting material layer, electron transport layer, electron injection layer and cathode layer arranged in sequence. The electron injection layer includes at least one electron injection layer. At least one high impedance layer is further arranged between at least one of the electron injection layers and the cathode layer. The resistivity of the electron injection layer and resistivity of the cathode layer are both smaller than the resistivity of the high impedance layer. The display device and the method for manufacturing the same can solve the problem of short circuit between cathode and anode of the display device caused by particles, significantly reduce the number of dark spots on the panel of the display device, and improve the panel yield of the display device.

A mask assembly includes a frame including a frame opening, and a mask disposed on the frame. The mask includes a body portion including an upper surface and a lower surface opposing each other and deposition openings spaced apart from each other, protrusions protruding from the upper surface and surrounding the corresponding deposition openings, and at least one step formation pattern overlapping the protrusions in a plan view and disposed in the body portion.

A deposition mask includes: a first surface and a second surface, in which a plurality of through-holes are formed; a pair of long side surfaces connected to the first and second surfaces, and defining a profile of the deposition mask in a longitudinal direction of the deposition mask; and a pair of short side surfaces connected to the first and second surfaces, and defining a profile of the deposition mask in a width direction of the deposition mask. The long side surface includes a first portion that is recessed inside and includes a first end portion positioned along the first surface, and a second end portion positioned along the second surface and positioned inside the first end portion. The through-hole includes a first recess formed on the first surface, and a second recess formed on the second surface and connected to the first recess through a hole connection portion.

An organic vapor phase deposition system is provided. The system may include a main reactor defined by a main reactor wail, at least two source barrels configured to introduce at least two organic vapors into the main reactor, and a substrate stage positioned in the main reactor and at least one carrier gas injection line configured to distribute a carrier gas along the main reactor wall, which reduces condensation of the organic vapors onto the main reactor wall as the organic vapors flow toward the substrate stage. A method of fabricating an organic film using organic vapor phase deposition is also provided.

Provided are a thin-film deposition mask assembly and a method of fabricating an organic light-emitting display panel using the same. A first mask includes a plurality of first openings disposed in odd columns and a plurality of second openings disposed in even columns. A single second opening disposed in an nth even column, among the plurality of second openings, is disposed between two first openings arranged in a first direction corresponding to row direction transverse to column direction and disposed in at least one column of (n−1)th and (n+1)th columns, among the plurality of first openings, where n is a natural number equal to or greater than 2. In some embodiments, the row direction and the column direction may be perpendicular to each other. The first mask is prevented from sagging.

The invention relates to an organic molecule for use in optoelectronic devices. The organic molecule has a structure of Formula I:

##STR00001##

wherein, R.sup.a and R.sup.2 are independently selected from the group consisting of: hydrogen, deuterium, N(R.sup.5).sub.2, OR.sup.5, SR.sup.5, Si(R.sup.5).sub.3, B(OR.sup.5).sub.2, OSO.sub.2R.sup.5, CF.sub.3, CN, halogen, C.sub.1-C.sub.40-alkyl, C.sub.1-C.sub.40-alkoxy, C.sub.1-C.sub.40-thioalkoxy, C.sub.2-C.sub.40-alkenyl, C.sub.2-C.sub.40-alkynyl, C.sub.6-C.sub.60-aryl, and C.sub.3-C.sub.57-heteroaryl, and R.sup.1 is a C.sub.10-C.sub.60-polycyclic aryl group.

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

A mixed layer including: a matrix material; and a dopant composition, wherein the dopant composition is doped in the matrix material, the dopant composition comprises a first dopant and a second dopant, an amount by weight of the matrix material is greater than an amount by weight of the dopant composition in the mixed layer, the matrix material, the first dopant, and the second dopant are different from each other, the matrix material does not include a transition metal, the first dopant includes a transition metal, the mixed layer is a layer formed by deposition of the matrix material, the first dopant, and the second dopant, the mixed layer has a concentration profile of the dopant composition with respect to a thickness of the mixed layer, provided that T.sub.m1>T.sub.p>T.sub.m1+2 is satisfied, wherein T.sub.m1, T.sub.p, and T.sub.m1+2 are respectively as described herein.