Aspects relate to patterned nanostructures having a feature size not including film thickness below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder material, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a suitable pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure in accordance with suitable applications.

A 1, 4 bidentate ligand comprising first and second ligand centres, wherein the first ligand centre is an sp.sup.2-hybridised carbon or a nitrogen atom; wherein the second ligand centre is a nitrogen atom in a five- or six-membered aromatic or hetero-aromatic ring, said ring having a substantially linear substituent T.sup.1 meta or para to the nitrogen atom; wherein T.sup.1 has the formula 1:

Ar.sup.1.sub.aY.sup.1.sub.bAr.sup.2[Y.sup.2.sub.cAr.sup.2].sub.dSB(1) and wherein T.sup.1 is attached to the ring by X.sup.1, wherein X.sup.1 is a bond, a methylene group, a substituted methylene group, an oxygen atom or a sulphur atom, wherein each Ar.sup.1 and Ar.sup.2 are independently selected from the group of C.sub.6 to C.sub.20 aromatic and C.sub.4 to C.sub.20 heteroaromatic groups, wherein Y.sup.1 and each Y.sup.2 is independently an optionally substituted C.sub.2 or acetonitrile trans double-bond linking moiety, wherein a is 0, 1, 2 or 3, wherein b is 0, 1 or 2, wherein each c is independently 0, 1 or 2, wherein d is 0, 1, 2, 3 or 4, S is a flexible spacer, and B represents a moiety having one or more cross-linkable functionalities. Network polymers, complexes, compositions, and devices based on this ligand. Method for forming devices based on this ligand.

A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.

An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

A method of manufacturing a laminate, transistor, and method of manufacturing transistor using a composition that includes an organic compound having a hydroxy group; a first cross-linking agent that is at least one organic silicon compound selected from the group including an organic silicon compound including a siloxane bond in the molecule and having three or more cyclic ether groups in the molecule, a chain organic silicon compound including two or more siloxane bonds in the molecule and having two or more cyclic ether groups in the molecule, a cyclic organic silicon compound including D unit in the molecule and having four or more cyclic ether groups bonded to a silicon atom of the D unit in the molecule, and a cyclic organic silicon compound including a T unit in the molecule and having two or more cyclic ether groups in the molecule; and a photocationic polymerization initiator.

An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

A first object of the present invention is to provide a solar cell having excellent photoelectric conversion efficiency and produced through a process including favorable scribing (e.g., mechanical patterning), and a method for producing the solar cell. A first aspect of the present invention provides a solar cell including, above a flexible substrate, an electrode, a transparent electrode, and a photoelectric conversion layer disposed between the electrode and the transparent electrode, the solar cell further including a hard film disposed between the flexible substrate and the electrode, the hard film containing a nitride, carbide, or boride, the nitride, carbide, or boride containing at least one element selected from the group consisting of titanium, zirconium, aluminum, silicon, magnesium, vanadium, chromium, molybdenum, tantalum, and tungsten.

Embodiments of the present disclosure relate to a quantum dot light emitting diode subpixel array, a method for manufacturing the same, and a display device. The method for manufacturing the quantum dot light emitting diode subpixel array according to embodiments of the present disclosure comprises a quantum dot accepting layer forming step of forming a quantum dot accepting layer on a substrate; a thermosensitive quantum dot material layer applying step of applying a thermosensitive quantum dot material layer containing a thermosensitive organic ligand on the quantum dot accepting layer; and a thermosensitive quantum dot material transferring step of subjecting the organic ligand of the thermosensitive quantum dot material in a predetermined area of the thermosensitive quantum dot material layer to a chemical reaction by heating such that the thermosensitive quantum dot material in the predetermined area is transferred onto a corresponding subpixel region on the quantum dot accepting layer.

The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.

An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.