A thin film transistor array panel and a manufacturing method are disclosed herein. The thin film transistor array panel includes a data line, a first block of a source electrode, a third block of a drain electrode, and an electrode layer which are formed by a first metal layer disposed on a baseplate; a second block of the source electrode, a fourth block of the drain electrode are formed by a second metal layer which is disposed on the first metal layer. The first block and the second block overlap to combine integrally. The third block and the fourth block overlap to combine integrally. The present invention can decrease the electrical resistance of each of the source electrode and the drain electrode.

The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are independently and at each occurrence H or C.sub.1-C.sub.10-alkyl. ##STR00001##

Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

To provide a light-emitting element in which an organic compound layer can be processed at once by a photolithography technique. A first electrode and an organic compound layer including an electron-injection layer are formed over an insulating surface. The electron-injection layer is the outermost layer of the organic compound layer and contains an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1. A sacrificial layer and a mask are formed over the electron-injection layer and the sacrificial layer is processed into an island shape using the mask. With use of the island-shaped sacrificial layer as a mask, the organic compound layer is processed into an island shape to cover the first electrode. Part of the island-shaped sacrificial layer is removed with an acidic chemical solution to expose the electron-injection layer. A second electrode is formed to cover the electron-injection layer.

An etchant composition includes an inorganic acid compound of about 8 wt % to about 15 wt %, a sulfonic acid compound of about 2.5 wt % to about 8 wt %, a sulfate compound of about 6 wt % to about 14 wt %, an organic acid compound of about 40 wt % to about 55 wt %, a metal or metal salt of about 0.01 wt % to about 0.06 wt %, and water.

The present disclosure discloses a method for manufacturing a light-emitting device using laser etching including: a first light-emitting layer forming step for depositing a first light-emitting layer on an surface of a hole transport layer deposited on an upper surface of an anode substrate; a first light-emitting device forming step for etching the first light-emitting layer to form a first light-emitting device; a second light-emitting layer depositing step for depositing a second light-emitting layer on a region including the upper surface of the hole transport layer; a second light-emitting device forming step for etching the second light-emitting layer to form a second light-emitting device; a third light-emitting layer depositing step for depositing a third light-emitting layer on a region including the upper surface of the hole transport layer; and a third light-emitting device forming step for etching the third light-emitting layer to form a third light-emitting device.

The present invention provides a manufacturing method of a display module, including a step of disposing a substrate on a transparent carrier plate, wherein the substrate has a bottom surface and a supporting surface opposite to the bottom surface; the bottom surface is attached to the transparent carrier plate and includes a first area and a second area. A step of performing a display elements manufacturing process on the supporting surface. A step of etching the first area by a first energy having a first energy density passing through the transparent carrier plate to separate the first area from the transparent carrier plate. A step of etching the second area by a second energy having a second energy density passing through the transparent carrier plate to separate the second area from the transparent carrier plate, wherein the second energy density is greater than the first energy density. A step of separating the substrate from the transparent carrier plate.

According to one embodiment, a method of manufacturing a display device, a substrate including a pair of partitions and a lower electrode disposed between the pair of partitions is formed. Then, an organic EL layer including a first portion including a pair of end surfaces which cover the lower electrode and are in contact with side surfaces of the pair of partitions, and a second portion located on each of the pair of partitions and spaced apart from the first portion, is formed. Thereafter, the second portion is removed by etching. Further, an upper electrode which covers the first portion is formed.

A display device includes a planarization layer disposed on a substrate, a first electrode disposed on the planarization layer and including silver (Ag), a contact preventing layer disposed on the first electrode, including a light absorbing material, and including a top surface and a side surface extending from an end of the top surface, and a pixel defining layer disposed on the contact preventing layer and including a bottom surface facing the top surface of the contact preventing layer, and a side surface extending from an end of the bottom surface. The first electrode includes a first region overlapping pixel defining layer. The contact preventing layer includes a second region overlapping the first region between the first electrode and the pixel defining layer. A first edge where the top and side surfaces of the contact preventing layer meet is located on the bottom surface of the pixel defining layer.

Disclosed is a charge connection layer, a method for manufacturing the same, and a laminated OLED component. The charge connection layer includes a first material layer and a second material layer which are both provided therein with protrudes and recessions. Each protrude of the first material layer extends into a corresponding recession of the second material layer. Each protrude of the second material layer extends into a corresponding recession of the first material layer. The charge connection layer is able to generate more carriers, whereby the performance of the charge connection layer can be improved, and the efficiency and lifespan of the laminated OLED component can be prolonged and improved.