A via opening including an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.

A display device, a display panel, and a manufacturing method thereof are provided. The display panel includes: a display substrate comprising a display region, wherein an opening region and an isolation region surrounding the opening region are arranged within the display region; a light-emitting layer formed on the display region; a blocking layer formed on a surface of the light-emitting layer away from the display substrate; and a first packaging layer covering the light-emitting layer and the blocking layer, wherein the first packaging layer is patterned through a photoresist layer to form a first through hole on the first packaging layer; a second through hole is respectively formed at a part of the blocking layer corresponding to the first through hole and at a part of the light-emitting layer corresponding to the first through hole.

The present invention relates to a method for manufacturing a photovoltaic device comprising: —forming a porous first conducting layer on one side of a porous insulating substrate, —coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, —performing a first heat treatment of the structure to bond the grains to the first conducting layer, —forming electrically insulating layers on surfaces of the first conducting layer, —forming a second conducting layer on an opposite side of the porous insulating substrate, —applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and—electrically connecting the charge conducting material to the second conducting layer.

A laser etching apparatus includes a chamber, a laser port, a laser emitter, a particle grabber, and a revolving window module. The chamber is configured to receive a substrate. The laser port is disposed below the chamber in a downward direction. The laser emitter is configured to emit a laser to the substrate disposed within the chamber through the laser port. The particle grabber is disposed within the chamber and includes a body disposed over the laser port. An opening is formed through the body. The opening is configured to pass the laser therethrough. The revolving window module includes a revolving window and a driving part configured to drive the revolving window. The revolving window is disposed between the particle grabber and the laser port.

A method of manufacturing an organic light emitting display device includes forming a plurality of display structures on a lower substrate, forming a top protection film including a plurality of top opening patterns on the lower substrate and the display structures such that the top opening patterns do not overlap the display structures, cutting the lower substrate between two adjacent display structures among the plurality of display structures along a first cutting line that is located at at least a portion of the top opening patterns, and separating the lower substrate to form a plurality of display panels each including the display structure and a portion of the lower substrate.

A pixel driving circuit and a display panel are provided. The pixel driving circuit includes a control unit to output a control signal by detecting a voltage difference between two opposite ends of a sampling resistor, and to turn on a fourth switch by the control signal. When the fourth switch is turned on, a second positive voltage received by the pixel driving circuit charges a second node to further speed up a voltage pulling up of the second node to improve a detecting speed of the pixel driving circuit.

A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

An organic thin film transistor (OTFT) is disclosed herein. The OTFT has a substrate, a data line, a transfer pad, a source electrode, a drain electrode, an active pattern, a first insulating layer, a gate electrode, a second insulating layer, and a transparent electrode. The data line and the transfer pad are disposed on the substrate. The source electrode and the drain electrode are disposed on the substrate, the data line, and the transfer pad. The active pattern is disposed on the data line, the transfer pad, the substrate, the source electrode, and the drain electrode. With the disposition of the active pattern on the source electrode and the drain electrode, the source electrode and the drain electrode are free from the bombardment of the plasma.

A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.

A light-emitting substrate includes a base; a first material layer and a second material layer that are disposed on the base, and an etch stop layer between the first material layer and the second material layer. The first material layer is closer to the base than the second material layer. The second material layer includes a plurality of patterns, and each pattern and the first material layer have an overlapping region therebetween. The etch stop layer includes at least portions in respective overlapping regions. A portion of the etch stop layer located in each overlapping region is in contact with the first material layer and the second material layer. Energy level(s) of the portion of the etch stop layer located in each overlapping region are matched with energy levels of the first material layer and the second material layer at corresponding positions.