A method can comprise providing an ink comprising reactants, a complexing agent, and a solvent, depositing the ink onto a substrate to form a wet film, drying the wet film to form a precursor layer, and annealing the precursor layer to form a perovskite film. The reactants can comprise a first and a second cation, a first metal, and a first and a second anion, wherein the first and second cations are different from each other, and the first and second anions are different from each other. The complexing agent can comprise a heterocyclic donor material. The perovskite film can comprise a mixed-cation mixed-halide perovskite material, and less than 5% by mass of the complexing agent. The perovskite film can also be formed using a one-step process.

The present invention relates to an electronic device comprising a hole injection layer and/or a hole transport layer and/or a hole generating layer, wherein at least one of the hole injection layer, the hole transport layer and the hole generating layer comprises a coordination complex comprising at least one electropositive atom M having an electro-negativity value according to Allen of less than 2.4 and at least one ligand L having the following structure:

##STR00001##

wherein R.sup.1 and R.sup.2 are independently selected from the group, consisting of C.sub.1 to C.sub.30 hydrocarbyl groups and C.sub.2 to C.sub.30 heterocyclic groups, wherein R.sup.1 and/or R.sup.2 may optionally be substituted with at least one of CN, F, Cl, Br and I.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

A solid-liquid-solid phase transformation (SLSPT) approach is used for fabrication of perovskite periodic nanostructures. The pattern on a mold is replicated by perovskite through phase change of perovskite from initially solid state, then to liquid state, and finally to solid state. The LED comprising perovskite periodic nanostructure shows better performance than that with flat perovskite. Further, the perovskite periodic nanostructure from SLSPT can be applied in many optoelectronic devices, such as solar cells, light emitting diodes (LED), laser diodes, transistors, and photodetectors.

Provided are an organic light-emitting device and a method of manufacturing the same. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer. The organic layer includes a hole transport region between the first electrode and the emission layer. The hole transport region also includes a first compound and a second compound, or includes the first compound and a third compound.

A display substrate, an ink-jet printing method thereof and a display apparatus are provided. The display substrate includes a base substrate. A plurality of pixel definition layers is disposed on the base substrate, and a sub-pixel region is formed between pixel definition layers. A pixel definition layer includes a first definition layer disposed on the base substrate, and the first definition layer adopts a hydrophilic material. The first definition layer includes an expansion layer capable of changing the thickness of the first definition layer.

Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.

A method of depositing a cathode on an organic light emitting diode (OLED) stack is provided. The method includes providing a substrate having at least a partial organic light emitting diode (OLED) stack disposed on a surface of the substrate. The method further includes depositing, on top of the partial OLED stack, a solution comprising a metal compound. The method further includes forming a conductive solid layer from the metal compound in the solution to form a cathode for the partial OLED stack.

A light-emitting device includes an anode, cathode, and a combined charge transport and emissive layer (CCTEL) disposed on a deposition surface between the anode and cathode. The CCTEL includes a crosslinked charge transport material and quantum dots, the quantum dots distributed unevenly within the crosslinked charge transport material and arranged relative to the deposition layer. The quantum dots include nucleophilic or electrophilic centers and ligands respectively bonded to the quantum dots. The deposition surface has nucleophilic or electrophilic properties. A method of forming the CCTEL includes the steps of depositing a mixture on a deposition surface having nucleophilic or electrophilic properties. The mixture includes a solvent, cross-linkable charge transport material, and quantum dots comprising nucleophilic or electrophilic centers and ligands respectively bonded to the quantum dots. At least a portion of the mixture to an activation stimulus to crosslink the cross-linkable material.

To improve the quality of semiconductor films, to reduce the culling of finished products, the parameters of which do not meet the established requirements in the method of forming a semiconductor film of a perovskite-like material, a layer of a perovskite-like material or a precursor of a perovskite-like material of the predefined thickness is deposited on the substrate, followed by halogen layer until liquefaction of the layer, then the halogen is gradually removed from the substrate until it is completely removed, ensuring the gradual crystallization of the perovskite-like material on a substrate to form perovskite-like material grains larger than perovskite-like material grains of the original film.