A display substrate, an ink-jet printing method thereof and a display apparatus are provided. The display substrate includes a base substrate. A plurality of pixel definition layers is disposed on the base substrate, and a sub-pixel region is formed between pixel definition layers. A pixel definition layer includes a first definition layer disposed on the base substrate, and the first definition layer adopts a hydrophilic material. The first definition layer includes an expansion layer capable of changing the thickness of the first definition layer.

The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

Disclosed are an organic semiconductor compound that exhibits chemical resistance and etch resistance while maintaining electrical characteristics and thus is applicable to an existing photolithography process, thereby increasing process efficiency, and an organic semiconductor device using the same.

Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below:
Cu.sub.2Sn.sub.2-XS.sub.3(Ga.sub.X).sub.2O.sub.3,[Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2<x<1.5).

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

The complex comprising one or more of the compound represented by general formula: RPb.sub.n1X.sub.m1 (wherein R is a cation represented by R.sup.1NH.sub.3.sup.+ (wherein R.sup.1 represents a univalent substituted or unsubstituted hydrocarbon group), or the following formula: ##STR00001##
(wherein R.sup.2 represents a hydrogen atom, or a univalent substituted or unsubstituted hydrocarbon group); X is the same or different, and each represents a halogen atom; n1 is 0.8 to 1.2; and m1 is 2.8 to 3.2, or the compound represented by general formula: R.sub.2Pb.sub.n2X.sub.m2 wherein R and X are as defined above; n2 is 2.8 to 3.2; and m2 is 7.7 to 8.3; and one or more dimethylformamide molecules is capable of decreasing the stirring time upon dissolution in an organic solvent such as DMSO, as well as decreasing the hysteresis and improving the solar cell characteristics (in particular, photoelectric conversion efficiency) when the complex is applied to a perovskite layer.

The present invention relates to a formulation containing at least one organic functional material and at least two different organic solvents, a first organic solvent A and a second organic solvent B, wherein the first organic solvent A has a boiling point in the range from 250 to 350 C. and a viscosity of >15 mPas, the second organic solvent B has a boiling point in the range from 200 to 350 C. and a viscosity of 10 mPas, the solubility of the at least one organic functional material in the second organic solvent B is 5 g/l, and the boiling point of the first organic solvent A is at least 10 C. higher than the boiling point of the second organic solvent B; as well as to electroluminescent devices prepared by using these formulations.

A display substrate, comprising a plurality of light emitting units of different colors, each of which comprises: an electron transport layer, a hole transport layer, a quantum-dot light emitting layer located between the electron transport layer and the hole transport layer; and a hydrophilicity and hydrophobicity variable layer, located between the electron transport layer and the quantum-dot light emitting layer and configured to undergo an exposure treatment to change hydrophilicity and hydrophobicity of sides of the hydrophilicity and hydrophobicity variable layer that are in contact with the electron transport layer and the quantum-dot light emitting layer.

A manufacturing method of an organic electronic device of the present invention, includes: a removing step of removing a volatile component from a flexible base material; a fixing step of fixing the flexible base material onto a support substrate via an adhesive layer; and a forming step of forming a device main body sequentially including a first electrode layer, at least one organic functional layer, and a second electrode layer on the flexible base material that is fixed onto the support substrate, on a side opposite to the support substrate, in this order, in which a vapor pressure of the volatile component is greater than or equal to 101325 Pa within a temperature range from 20 C. to a melting point of a parent resin of the flexible base material.