A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.

The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

It is an object of the present invention to provide a polymer organic EL element that has a low driving voltage, high light emission efficiency, and a long lifespan. The present invention provides an organic electroluminescence element having a pair of electrodes and at least one organic layer between the electrodes, wherein the organic layer is constituted by two or more high molecular weight compounds including at least high molecular weight compounds α and β, and the high molecular weight compound α has a substituted triarylamine structural unit represented by a general formula (1) below and has a weight average molecular weight of 10,000 or more and less than 1,000,000 in terms of polystyrene. For the symbols in the formula, see the Description.

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The present specification relates to a polymer and an organic light emitting device using the same, wherein the polymer is represented by the following Chemical Formula 1:

E1-[A].sub.a—[B].sub.b—[C].sub.c-E2  [Chemical Formula 1] Wherein A, B, C, E1, E2, a, b and c are described herein.

A quantum dot film includes: one surface grafted with a first ammonium halide ligand; and another surface opposite to the one surface and grafted with a second ammonium halide ligand. The first ammonium halide ligand has a general structural formula:

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and the second ammonium halide ligand has a general structural formula:

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n.sub.1≤12, n.sub.2≤12, 12≤n.sub.3≤17, 12≤n.sub.4≤17, n.sub.1, n.sub.2, n.sub.3 and n.sub.4 are natural numbers, Y.sub.1 and Y.sub.2 are independently selected from phenyl or hydrogen, and X is halogen.

The present disclosure provides a quantum dot light emitting panel, a display device, and a manufacturing method. The quantum dot light emitting panel comprises: a base substrate; a cathode layer, located on a side of the base substrate; an electron transfer layer, located on a side of the cathode layer located away from the base substrate; a quantum dot light emitting layer, located on a side of the electron transfer layer located away from the cathode layer, and having at least two light emitting portions having mutually different wavelength ranges of emitted light; a photosensitive polymer film layer, located between the quantum dot light emitting layer and the electron transfer layer, having photosensitive portions in a one-to-one correspondence with the light emitting portions, and configured such that molecular chains break when the photosensitive polymer film layer is subjected to preconfigured light irradiation; and an anode layer, located on a side of the quantum dot light emitting layer located away from the photosensitive polymer film layer.

A light-emitting element containing a light-emitting material with high light emission efficiency is provided. The light-emitting element includes a high molecular material and a guest material. The high molecular material includes at least a first high molecular chain and a second high molecular chain. The guest material has a function of exhibiting fluorescence or converting triplet excitation energy into light emission. The first high molecular chain and the second high molecular chain each include a first skeleton, a second skeleton, and a third skeleton, and the first skeleton and the second skeleton are bonded to each other through the third skeleton. The first high molecular chain and the second high molecular chain have a function of forming an excited complex.

The electroluminescent element includes an anode electrode, a cathode electrode, and a quantum dot (QD) layer including quantum dots and arranged between the anode electrode and the cathode electrode. The quantum dots are Cd-free quantum dots that include at least Zn and Se, and do not include Cd at a mass ratio of 1/30 or greater in relation to Zn. The particle size of each quantum dot is within a range from 3 nm to 20 nm.

As a means for providing an electroluminescent device capable of achieving high luminance, high efficiency, and at the same time excellent device life-span, a polymer having an overlap index of greater than or equal to about 0.00001 and less than or equal to about 1.8, and a polymer including a structural unit represented by Chemical Formula (1) are provided:

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Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10.sup.12 Jones (D*) at a wavelength of 1040 nm was achieved.