The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.

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A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the general formula (2).

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.

A photodetector element includes: an anode; a cathode; and an active layer provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, and a value obtained by subtracting the absolute value of energy level of HOMO of the p-type semiconductor material from the absolute value of the energy level of HOMO of the n-type semiconductor material is 0.35 or less. Further, the difference between the HOMO of the n-type semiconductor material and the HOMO of the p-type semiconductor material is preferably 0 to 0.10 eV, and the p-type semiconductor material is preferably a polymer compound containing a constituent unit represented by the following Formula (I).

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Ar.sup.1 and Ar.sup.2 represent a trivalent aromatic heterocyclic group optionally having a substituent or a trivalent aromatic carbocyclic group optionally having a substituent, and Z represents a group represented by Formulae (Z-1) to (Z-7).

A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.

Disclosed herein are organic semiconductors using optical signaling on a microelectronics package and methods for manufacturing the same. The microelectronics packages may include a substrate, an acceptor, a donor, and a solder resist layer. The substrate may include a trace. The acceptor may be in electrical communication with the trace. The donor may be connected to the acceptor. The solder resist layer may be connected to the substrate and encapsulate a portion of at least the acceptor.

Organic semiconductor photovoltaic devices and compositions with acceptor-donor-acceptor type polymer electron donors are provided. In one embodiment, a composition of matter comprises a copolymer material having an acceptor-donor-acceptor moiety repeat unit.

Provided are an organic photodetector and an electronic apparatus including the same. The organic photodetector includes a first electrode, a second electrode facing the first electrode, an auxiliary layer arranged between the first electrode and the second electrode, and an activation layer arranged between the first electrode and the activation layer. The auxiliary layer includes a compound having a refractive index of about 2.2 or more.

The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair.