A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

Acenes, such as aza-acenes are attractive materials for organic semiconductors, specifically for n-type materials. There are disclosed new derivatives of acenes that are fabricated using novel synthesis. For example, the disclosed fabrication strategies have allowed for the first time new aza-tetracene and aza-pentacene derivatives. The HOMO and LUMO energy levels of these materials are tunable through appropriate substitution and as predicted, deepened. There are also disclosed organic photosensitive devices comprising at least one aza-acene such as aza-tetracene and aza-pentacene.

There is disclosed an organic photovoltaic device comprising at least one first subcell comprising at least one first small molecular weight material deposited by solution processing, and at least one second subcell comprising a weight at least one second small molecular material deposited by vacuum evaporation. Also disclosed herein is a method for preparing an organic photovoltaic device comprising at least one first subcell comprising at least one first small molecular weight material and at least one second subcell comprising at least one second small molecular weight material, the method comprising depositing at least one first small weight material by solution processing; and depositing at least one second small weight material by vacuum evaporation.

A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): ##STR00001##
in which A represents any one of oxygen, sulfur or selenium, any one of R.sub.1 to R.sub.4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R.sub.1 to R.sub.4 each represent hydrogen, any one of R.sub.5 to R.sub.8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R.sub.5 to R.sub.8 each represent hydrogen.

Methods and devices for forming painted circuits using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate (111) and one or more paint layer (106, 108, 110, 112, 114, 116, 120, 122) applied to the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers includes a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode. The organic photoelectric conversion layer has a domain of one organic semiconductor material therein. The domain of the one organic semiconductor material has a percolation structure in which the domain vertically extends in the organic photoelectric conversion layer in a film-thickness direction, and has a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in the film-thickness direction of the organic photoelectric conversion layer.

A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

An imaging device including pixels each including a photoelectric converter that converts light into a signal charge; and controller, where the controller causes the pixels to perform global shutter operation in a first frame period and causes the pixels to perform rolling shatter operation in a second frame period different from the first frame period.

[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1), ##STR00001## where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R.sub.1 to R.sub.3 each independently represent a substituted or unsubstituted ring structure, and at least one of R.sub.1 to R.sub.3 includes at least one hetero atom in the ring structure.