A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

An organic electroluminescent device includes a pair of electrodes; and an organic layer between the pair of electrodes, which includes a light-emitting layer, wherein the organic layer contains a compound represented by the following formula (I); and the light-emitting layer contains a iridium complex phosphorescent material: ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 each represents a hydrogen atom or a substituent, and contiguous substituents of R.sup.1 to R.sup.8 may be bonded to each other to form a condensed ring; R.sup.9 represents an alkyl group, an alkenyl group, an aryl group, a hetero-aryl group, or a silyl group, and each of which group may be substituted with a substituent; and at least one of R.sup.1 to R.sup.9 represents a deuterium atom or a substituent containing a deuterium atom.

A photoelectric conversion element includes a first layer, a second layer, and a third layer that are laminated in this order. The first layer is formed of a plurality of particles including an inorganic semiconductor as a main component, an aggregate of the particles, or a thin film including an inorganic semiconductor as a main component. The second layer is provided on a surface of each of the particles or the aggregate and is formed of a plurality of particles including a perovskite structure as a main component, an aggregate of the particles, or a thin film including a perovskite structure as a main component. The third layer is formed of a plurality of particles including an organic metal complex as a main component, an aggregate of the particles, or a thin film including an organic metal complex as a main component.

A Europium beta-diketonate molecule comprises Europium with ligands dibenzoylmethane, 1,10-phenanthroline, and methoxide. The molecule is photoluminescent, absorbing light from the ultraviolet region through the blue region and emitting red light characteristic of trivalent europium. The molecule may be used, for example, as a phosphor in a phosphor-converted light-emitting diode.

Disclosed is a rare-earth complex including a rare-earth ion, and a ligand coordinate-bonded to the rare-earth ion and having a condensed polycyclic aromatic group. The condensed polycyclic aromatic group is a residue formed by removing a hydrogen atom bonded to a condensed aromatic ring from a condensed polycyclic aromatic compound represented by the following Formula (I).

##STR00001##

In Formula (I), R.sup.1 and R.sup.2 represent hydrogen atoms or groups which are bonded to each other to form one aromatic ring or a condensed aromatic ring including two or more aromatic rings.

Embodiments relate generally to lanthanide nanocrystals as ultraviolet downconverters.

A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, ##STR00001## wherein, in Formula 1, R.sup.1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R.sup.2 and R.sup.3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R.sup.2 and R.sup.3 being a C3-C5 branched alkyl group, and R.sup.4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

The present invention relates to an electronically doped semiconductor material and to an electronic component comprising cerium-ethylenediamine ketone-type and cerium-salen-type complexes. The invention also relates to the use of the cerium-ethylenediamine ketone-type and cerium-salen-type complexes as electron acceptors, especially as p-dopants and electron transport materials in organic-electronic components. The invention further relates to novel cerium-ethylenediamine ketone-type and cerium-salen-type complexes.

An organometallic compound represented by Formula 1:

M(L.sub.1).sub.n1(L.sub.2).sub.n2Formula 1 wherein groups M, L.sub.1, L.sub.2, n1, and n2 are the same as they are defined in the specification.