A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

A light-emitting structure includes a substrate, a sub-pixel stack over a surface of the substrate, and a bank including a first bank portion and a second bank portion. The sub-pixel stack has an emissive stack including an emissive layer between a first transport layer and a second transport layer, a first electrode layer coupled to the first transport layer, and a second electrode layer coupled to the second transport layer. The second bank portion is between the first bank portion and the sub-pixel stack, and the bank surrounding at least the emissive stack and the first electrode layer forms an interior space above the sub-pixel stack.

Imidazophenanthridine ligands and metal complexes are provided. The compounds exhibit improved stability through a linking substitution that links a nitrogen bonded carbon of an imidizole ring to a carbon on the adjacent fused aryl ring. The compounds may be used in OLEDs, particularly as emissive dopants in the emissive region in the OLEDs, providing devices with improved efficiency, stability, and manufacturing. In particular, the compounds provided herein may be used in blue devices having high efficiency.

A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

Self-organizing patterns with micrometer-scale feature sizes are promising for the large area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. The present disclosure includes approaches to form period patterns in single layers of organic semiconductors by an annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features form initially in the amorphous region within a micron of the crystal growth front, likely due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned by varying film thickness and annealing temperature, millimeter scale domain sizes are obtained. Aspects of the disclosure can be exploited for self-assembly of microstructured organic optoelectronic devices, for example.

The present disclosure provides a light emitting device and a display apparatus. The light emitting device includes: a substrate; a first electrode, a functional layer and a second electrode which are sequentially arranged on the substrate, where the functional layer at least includes a light emitting layer, a dielectric layer is arranged between at least one of the first electrode and the second electrode and the functional layer, metal nanoparticles are arranged in the dielectric layer, and a localized plasmon resonance frequency of the metal nanoparticles is matched with a wavelength of light emitted by the light emitting layer.

The present disclosure relates to a nanomaterial, a light-emitting diode device, and a preparation method thereof. The nanomaterial includes a ZnO nanoparticle and an In.sub.2O.sub.3 shell layer covering a surface of the ZnO nanoparticle. In the present disclosure, the In.sub.2O.sub.3 shell layer are coated on the surface of the ZnO nanoparticle to form a ZnO@ In.sub.2O.sub.3 core shell structure, that is, prepare the nanomaterial. In the present disclosure, In.sub.2O.sub.3 having a wide bandgap is used as a shell layer to cover a semiconductor ZnO nanoparticle having a relatively narrow bandgap, which can effectively passivate the surface of the ZnO nanoparticle to reduce the surface defects and relieve lattice mismatch. Meanwhile, holes may be effectively blocked from being transported from a light-emitting layer to a cathode to improve the recombination efficiency of electrons and holes on the light-emitting layer. Thus, the light-emitting performance of the light-emitting device may be improved.

An organic light-emitting diode with an inorganic two-dimensional (2D) EL active material may comprise a plurality of layers on a plastic or glass substrate. In addition to the EL layer, the device may comprise a hole injection layer, a hole transport layer/electron blocking layer, an electron transport layer/hole blocking layer, an electron injection layer, and optional buffer layers such as poly(methyl methacrylate) (PMMA) to help balance the charge injection into the 2D material and redistribute the electric field.

An OLED, a method for fabricating the same, and a display device are disclosed. The OLED includes a first electrode, a first carrier transporting layer, an organic light emitting layer, a second carrier transporting layer, a second electrode, and a light extracting layer between the first electrode and the organic light emitting layer. The light extracting layer is made from a first carrier transporting material. The light extracting layer is formed between the first electrode and the organic light emitting layer at a light exit side of the OLED, and is formed from the first carrier transporting material. This increases the light extracting efficiency of the OLED. The light extracting layer further acts as the first carrier transporting layer, thus simplifying the structure of OLED, making OLED easy to fabricate, and efficiently controlling cost.

A light-emitting device includes a first electrode, an electron transport layer (ETL), a second electrode being a transparent conductive electrode (TCE) including electrically conductive nanoparticles; an emissive layer (EML) in electrical contact with the first electrode and the second electrode; and an ultrathin metal layer between the TCE and the ETL, wherein the ultrathin metal layer provides an energy step between the TCE and the ETL.