A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.

A light-emitting element includes: pixel electrodes provided for individual subpixels of at least three colors; a common electrode provided facing each of the pixel electrodes; and light-emitting layers of each color provided between the common electrode and, respectively, each of the pixel electrodes, wherein one of each of the pixel electrodes and the common electrode is a cathode electrode and the other is an anode electrode and among the light-emitting layers of the at least three colors, a light-emitting layer of a color having a largest electron affinity extends in a state of being layered between the cathode electrode and each light-emitting layer of the other colors as well.

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N≥1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

The present invention provides compounds comprising a tridentate ligand L.sub.A wherein L.sub.A is complexed to a metal, M. The metal complexes comprising the tridentate ligand L.sub.A may be useful in an organic layer disposed between the anode and the cathode in an organic light emitting device (OLED).

The present disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel comprises a plurality of sub-pixels, wherein a part is face-up sub-pixels and the rest is flip sub-pixels. In the face-up sub-pixels, a first electrode, a hole transport layer, a light-emitting layer, an electron transport layer, and a second electrode are disposed on a substrate in sequence, and in the flip sub-pixels, the first electrode, an electron transport layer, a light-emitting layer, a hole transport layer, and the second electrode are disposed on the substrate in sequence.

A compound comprising a first ligand L.sub.A of Formula I,

##STR00001##

is disclosed. In the structure of Formula I, ring A is a 5-membered or 6-membered carbocyclic or heterocyclic ring, Z.sup.1-Z.sup.4 are each independently C or N; at least two consecutive Z.sup.1-Z.sup.4 are C, and are fused to a structure of Formula II

##STR00002##

or Formula III

##STR00003##

Y.sup.1 and Y.sup.2 are each independently O, S, Se, CRR′, SiRR′, or GeRR′; each R.sup.A, R.sup.B, R.sup.C, R, and R′ is a hydrogen or a substituent; and any two substituents may be joined or fused together to form a ring. In the compound, L.sub.A is complexed to a metal M by the dashed lines in Formula I to form a five-membered chelate ring, and M has an atomic weight greater than 40. Organic light emitting devices and consumer products containing the compounds are also disclosed.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

A compound having a first ligand L.sub.A of Formula I ##STR00001##
useful as phosphorescent dopant in OLEDs is disclosed.

A large area active-matrix organic light-emitting diode microdisplay and method for fabricating the same is provided which includes a panel having resolution of greater than 2,000 pixels per inch and a size of 1.4 or more inches for supporting the needs of virtual reality and augmented reality application.

A protective film includes a first film, a second film, and a panel protective film disposed between the first film and the second film. The panel protective film includes a first portion and a second portion spaced apart from each other along a first direction. The first portion includes a first side and a second side opposite to each other along the first direction, a third side and a fourth side opposite to each other along a second direction crossing the first direction, and a first curvilinear portion connecting the second side to the fourth side, the first curvilinear portion corresponding to first respective corners of the first film and the second film and having a curved shape. The first side faces the second portion, and the first curvilinear portion is disposed inside edges of the first film and the second film at the first respective corners thereof.