A nanomaterial includes a core and an outer shell. The core includes ZnO nanoparticles and a metal element doped in the ZnO nanoparticles. The outer shell includes a metal oxide.

A method of manufacturing a display device includes forming a color filter layer (CFL), and forming a light control layer (LCL) on the CFL. Forming the LCL includes: forming, on the CFL, preliminary partition parts (PPPs) spaced apart from each other; forming a preliminary light control part (PLCP) by providing a quantum dot (QD) solution between the PPPs, the QD solution including a QD and a base resin; forming a light control part (LCP) by volatilizing the base resin from the PLCP; and forming partition parts by reducing a thickness of the PPPs. A ratio between a first weight ratio (WR) of the QD in the PLCP and a second WR of the QD in the LCP is about 1:1.1 to about 1:3.0. The first WR is a WR of the QD in the entire PLCP, and the second WR is a WR of the QD in the entire LCP.

A display device includes a display panel including a base layer, a first heat dissipation member disposed on a first surface of the base layer, and a second heat dissipation member disposed on a first surface of the first heat dissipation member. The first heat dissipation member includes a first polymer resin and first metal nano-particles dispersed in the first polymer resin, and the second heat dissipation member includes a second polymer resin and second metal nano-particles dispersed in the second polymer resin. The weight of the first metal nano-particles in the first heat dissipation member may be different from the weight of the second metal nano-particles in the second heat dissipation member.

A display apparatus that includes an OLED (organic light-emitting device) substrate including a first blue light-emitting unit, a green light-emitting unit, and a second blue light-emitting unit which are stacked; and a color controller provided on the OLED substrate to adjust color of a light generated from the OLED substrate.

The embodiments provide a process for easily producing an electrode having low resistance, easily subjected to post-process and hardly impairing the device; and also provide, as its application, a production process for a photoelectric conversion device. The process comprises the steps of: coating a hydrophobic substrate directly with a dispersion of metal nanomaterial, to form a metal nanomaterial layer, coating the surface of the metal nanomaterial layer with a dispersion of carbon material, to form a carbon material layer and thereby to form an electrode layer comprising a laminate of the metal nanomaterial layer and the carbon material layer, pressing the carbon material layer onto a hydrophilic substrate so that the surface of the carbon material layer may be directly fixed on the hydrophilic substrate, and peeling away the hydrophobic substrate so as to transfer the electrode layer onto the hydrophilic substrate.

The present invention provides a luminous body, and light emitting film, light emitting diode and light emitting device including the same. The luminous body can include a plurality of emission moieties each including an inorganic emission particle and a coating layer surrounding a surface of the inorganic emission particle, and an encapsulation moiety connected to the coating layer and surrounding the plurality of emission moieties. The present invention further provides a light emitting film, a liquid crystal display device, a light emitting diode package, a light emitting diode and a light emitting display device including the luminous body.

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

An organic light emitting diode (OLED) display device includes a thin film transistor substrate including a first substrate, a thin film transistor disposed on the first substrate and a white organic light emitting diode (WOLED) electrically connected to the thin film transistor; a color filter substrate comprising a second substrate that faces the first substrate, and red, green and blue color filters disposed on the second substrate; a quantum dot pattern disposed on the WOLED of the thin film transistor substrate; and a refractive film disposed between the color filter substrate and the thin film transistor substrate provided with the quantum dot pattern.

Embodiments of the disclosed subject matter provide a full-color pixel arrangement for a device, the full-color pixel arrangement including a plurality of sub-pixels, each having an emissive region of a first color, where the full-color pixel arrangement comprises emissive regions having exactly one emissive color that is a red-shifted color of a deep blue sub-pixel of the plurality of sub-pixels. Embodiments of the disclosed subject matter may also provide a full-color pixel arrangement for a device, the full-color pixel arrangement including a plurality of sub-pixels, each having an emissive region of a first color, where the full-color pixel arrangement comprises emissive regions having exactly one emissive color, and where the plurality of sub-pixels comprise a light blue sub-pixel, a deep blue sub-pixel, a red sub-pixel, and a green sub-pixel.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of n between the first electrode and the second electrode; and a charge-generation unit(s) in the number of n−1 between the adjacent light-emitting units. The light-emitting units each include an emission layer, and at least one of the charge-generation unit(s) includes an n-type charge-generation layer, a p-type charge-generation layer, and an interlayer between the n-type charge-generation layer and the p-type charge-generation layer. The p-type charge-generation layer includes a first material and a second material, the first material includes a hole-transporting organic compound, an inorganic insulation compound, or any combination thereof, the second material includes at least one inorganic semiconductor compound, the interlayer comprises a third material, and the third material is selected from an organic compound, an inorganic semiconductor compound, and an inorganic insulation compound.