A power generation apparatus according to one embodiment of the present invention, comprises: a cooling unit, a first thermoelectric module including a first thermoelectric element disposed on a first surface of the cooling unit, and a first heat sink disposed on the first thermoelectric element; and a first wiring part connected to the first thermoelectric element, wherein the cooling unit has a fluid receiving part formed in a first area thereof and a tunnel formed in a second area thereof, and the first wiring part passes through the tunnel.

A power generation device according to an embodiment of the present invention comprises: a cooling part; a thermoelectric module disposed on a first region of one surface of the cooling part; a connector part disposed on a second region of the one surface of the cooling part and connected to the thermoelectric module; a heat insulating member disposed on the connector part and disposed so as to expose a side surface of the connector part; a shield member disposed so as to cover the heat insulating member and the connector part; and a first insulating layer disposed between the connector part and the shield member.

A power generation device according to an embodiment of the present invention comprises: a cooling part; a thermoelectric module disposed on a first region of one surface of the cooling part; a connector part disposed on a second region of the one surface of the cooling part and connected to the thermoelectric module; a heat insulating member disposed on the connector part and disposed so as to expose a side surface of the connector part; a shield member disposed so as to cover the heat insulating member and the connector part; and a first insulating layer disposed between the connector part and the shield member.

A thermoelectric conversion element includes a P-type thermoelectric conversion layer, a first metal layer, a second metal layer, a first joining layer, and a second joining layer. The P-type thermoelectric conversion layer includes a thermoelectric conversion material containing Mg and at least one selected from the group consisting of Sb and Bi. The first metal layer and the second metal layer each include Cu or a Cu alloy. The first joining layer and the second joining layer each include Al or an Al alloy containing Mg.

A thermoelectric conversion element includes a P-type thermoelectric conversion layer, a first metal layer, a second metal layer, a first joining layer, and a second joining layer. The P-type thermoelectric conversion layer includes a thermoelectric conversion material containing Mg and at least one selected from the group consisting of Sb and Bi. The first metal layer and the second metal layer each include Cu or a Cu alloy. The first joining layer and the second joining layer each include Al or an Al alloy containing Mg.

A thermoelectric device according to one embodiment of the present invention includes a substrate, a first insulating layer disposed on the substrate, a second insulating layer disposed on the first insulating layer and having an area smaller than an area of the first insulating layer, a plurality of first electrodes disposed on the second insulating layer, a plurality of semiconductor structures disposed on the plurality of first electrodes, and a plurality of second electrodes disposed on the plurality of semiconductor structures, wherein the second insulating layer includes an overlapping region in which the plurality of first electrodes, the plurality of second electrodes, and the plurality of semiconductor structures overlap vertically and a protruding pattern protruding from the overlapping region toward a first outer side the substrate.

A thermoelectric device according to one embodiment of the present invention includes a substrate, a first insulating layer disposed on the substrate, a second insulating layer disposed on the first insulating layer and having an area smaller than an area of the first insulating layer, a plurality of first electrodes disposed on the second insulating layer, a plurality of semiconductor structures disposed on the plurality of first electrodes, and a plurality of second electrodes disposed on the plurality of semiconductor structures, wherein the second insulating layer includes an overlapping region in which the plurality of first electrodes, the plurality of second electrodes, and the plurality of semiconductor structures overlap vertically and a protruding pattern protruding from the overlapping region toward a first outer side the substrate.

A thermoelectric power-generation device includes: a first flow path through which a high-temperature medium flows; a second flow path through which a low-temperature medium that has a temperature difference with respect to the high-temperature medium flows; an insulating isolation plate configured to isolate the first flow path from the second flow path; insulating outer layer isolation plates provided at outermost portions of layered flow paths including the first flow path and the second flow path; a plurality of thermoelectric conversion units configured to generate power using the temperature difference; and electrodes provided at the outer layer isolation plates and configured to connect the thermoelectric conversion units with mutually different semiconductor polarities in series, and the thermoelectric conversion units are disposed so as to straddle the first flow path and the second flow path.

A multi-core thermocouple includes a plurality of wires, an insulation core surrounding the plurality of wires, a sheath surrounding the insulation core, and a plurality of electrical junctions. The plurality of electrical junctions may include a first electrical junction formed between a first wire of the plurality of wires and the sheath at a first axial mid-section of the multi-core thermocouple, the first electrical junction including a first swaged axial mid-section of the sheath and a second electrical junction formed between a second wire of the plurality of wires and the sheath at a second, different axial mid-section of the multi-core thermocouple, the second electrical junction including a second swaged axial mid-section of the sheath.

The invention provides a nano water ion group generator, including: at least a pair of P/N-type semiconductor dies including P-type semiconductor dies and N-type semiconductor dies, with one end being a cooling end and the other end being a heating end; a heat absorption member for obtaining a cold energy generated by the cooling end and transferring the cold energy to a blocking member; the blocking member for conducting the cold energy to obtain moisture in a condensed water or an air with high relative humidity; an ionizing member to absorb, collect or accumulate moisture in the condensed water or the air with high relative humidity, and be electrically coupled to the high voltage power supply for further ionizing the air and the moisture around the ionizing member under the action of avalanche effect to obtain at least one nanometer-sized substance among charged particles and oxygen-containing radicals.