A system, a thermoelectric generator, and a method for generating electricity are provided. The system includes a thermoelectric generator, a cooling system, and a heating system. The cooling system includes a cold side module configured to hold a predetermined volume of air, a subterranean heat exchanger including an underground conduit, the underground conduit having a first end configured to receive ambient air and a second end coupled to the inlet of the cold side module, and an air exhaust coupled to the outlet of the cold side module and having one or more valves configured to control an airflow from the subterranean heat exchanger towards the air exhaust. The heating system includes a first solar concentrator to collect light rays, a hot side module, and a fiber optic cable to transport the collected light rays to the hot side module.

A heat conversion apparatus according to one embodiment of the present invention comprises: a duct through which cooling fluid passes; a first thermoelectric module disposed on a first surface of the duct; a second thermoelectric module disposed on a second surface, which is disposed in parallel to the first surface, of the duct; and a gas guide member disposed above a third surface disposed between the first surface and the second surface of the duct so as to be spaced from the third surface, wherein the gas guide member includes one end thereof coming in contact with the first thermoelectric module, the other end thereof coming in contact with the second thermoelectric module, and an extended part for connecting the one end and the other end, and the gas guide member can have a form in which the distance thereof from the third surface gradually increases toward the center between the one end and the other end.

A method of manufacturing an integrated circuit structure includes forming active regions, forming source/drain regions, and forming conductive segments resulting in a thermoelectric structure including a p-type region positioned on a front side of the substrate, an n-type region positioned on the front side of the substrate, and a wire on the front side of the substrate configured to electrically couple the p-type region to the n-type region. The method includes forming a first via configured to thermally couple the p-type region to a first power structure on a back side of the substrate, forming a second via configured to thermally couple the n-type region to a second power structure on the back side of the substrate, and electrically coupling an energy device to each of the first and second power structures.

A unique, environmentally-friendly micron scale autonomous electrical power source is provided for generating renewable energy, or a renewable energy supplement, in electronic systems, electronic devices and electronic system components. The autonomous electrical power source includes a first conductor with a facing surface conditioned to have a low work function, a second conductor with a facing surface having a comparatively higher work function, and a dielectric layer of not more than 200 nm in thickness sandwiched between the respective facing surfaces of the first conductor and the second conductor. The autonomous electrical power source is configured to harvest minimal thermal energy from any source in an environment above absolute zero. An autonomous electrical power source component is also provided that includes a plurality of autonomous electrical power source constituent elements electrically connected to one another to increase a power output of the autonomous electrical power source.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

According to an embodiment, disclosed is a thermoelectric device comprising: a thermoelectric element comprising a first substrate, a plurality of first electrodes disposed on the first substrate, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and a second substrate disposed on the plurality of second electrodes; and a heat sink comprising a plurality of fins disposed to be spaced apart on the second substrate, wherein the second substrate comprises a first region overlapping the second electrodes in a vertical direction and a second region not overlapping the second electrodes in the vertical direction, and wherein separation distances between adjacent fins of the plurality of fins are different from each other in the first region and the second region.

A thermoelectric element according to one example of the present invention comprises: a first substrate; a first insulating layer disposed on the first substrate; a first bonding layer disposed on the first insulating layer; a second insulating layer disposed on the first bonding layer; a first electrode disposed on the second insulating layer; a P-type thermoelectric leg and N-type thermoelectric leg, disposed on the first electrode; a second electrode disposed on the P-type thermoelectric leg and N-type thermoelectric leg; a third insulating layer disposed on the second electrode; and a second substrate disposed on the third insulating layer, wherein the first insulating layer is composed of a composite comprising silicon and aluminum, the second insulating layer is a resin layer composed of a resin composition comprising an inorganic filler and at least one of an epoxy resin and a silicone resin, and the first bonding layer comprises a silane coupling agent.

A cooling system for a photovoltaic panel including micro flat heat pipes (HP) integrated with thermoelectric generators (TEG) and a cooled water reservoir for cooling the working fluid in heat pipes. The cooled water in the reservoir is pumped from the condensate pan of an air conditioner. Experimental results show that cooling system reduced the average temperature of the panel by as much as 19° C. or 25%. Further, the output power of the photovoltaic panel increased by 44% when the photovoltaic panel was used in a very hot climate (30-40° C.). An additional two watts of power was generated by the TEGs.

A cooling system for a photovoltaic panel including micro flat heat pipes (HP) integrated with thermoelectric generators (TEG) and a cooled water reservoir for cooling the working fluid in heat pipes. The cooled water in the reservoir is pumped from the condensate pan of an air conditioner. Experimental results show that cooling system reduced the average temperature of the panel by as much as 19° C. or 25%. Further, the output power of the photovoltaic panel increased by 44% when the photovoltaic panel was used in a very hot climate (30-40° C.). An additional two watts of power was generated by the TEGs.

Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.