A thermoelectric element according to one embodiment of the present invention includes a first substrate, a first insulating layer disposed on the first substrate, first electrodes disposed on the first insulating layer, a plurality of semiconductor structures disposed on the first electrodes, and second electrodes disposed on the plurality of semiconductor structures, wherein an average value of absolute values of lengths from a center line to a profile curve of a rough surface of at least a part of an upper surface of the first insulating layer is in the range of 1 to 5 μm.

Provided according to an embodiment is a thermoelectric element comprising: a first insulating part; multiple first electrodes disposed on the first insulating part; a second electrode disposed above the first electrodes; a first conductive semiconductor structure and a second conductive semiconductor structure disposed while being spaced each other between the first electrodes and the second electrode; and a second insulating part disposed on the second electrode, wherein the first insulating part comprises first protrusions protruding toward the first electrodes, and the second insulating part comprises a second protrusion protruding toward the second electrode.

A power generation apparatus according to an embodiment of the present invention comprises: a cooling unit, a thermoelectric module comprising a thermoelectric element disposed on one surface of the cooling unit, and a heat sink disposed on the thermoelectric element; a guide plate disposed opposite the thermoelectric module; and a branch unit disposed on another surface perpendicular to the one surface of the cooling unit. The heat sink includes multiple heat dissipation fins which are spaced apart from each other. The ratio of the shortest horizontal distance between the heat sink and the guide plate to the shortest horizontal distance between the branch unit and the guide plate is 0.0625 to 0.25.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

A thermoelectric apparatus according to one exemplary embodiment of the present invention includes a heat dissipation member having a groove formed therein, a first electrode disposed in the groove, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, a substrate disposed on the second electrode, and a sealing member disposed between a sidewall of the groove and the substrate.

Provided is a thermoelectric module. The thermoelectric module includes a thermoelectric element including a first substrate, a first electrode disposed on the first substrate, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, and a second substrate disposed on the second electrode, a heat sink disposed on the second substrate, and an adhesive layer configured to bond the second substrate to the heat sink. The heat sink has a shape in which predetermined patterns are regularly repeated and connected. Each pattern includes a first surface disposed opposite to the second substrate, a in second surface which extends upward from one end of the first surface, a third surface which extends from the second surface to face the second substrate, and a fourth surface which extends upward from the other end opposite to the one end of the first surface and is connected to a third surface of an adjacent pattern. A distance between the third surface and the second substrate is greater than a distance between the first surface and the second substrate, and the adhesive layer is disposed between the second substrate and the first surface.

A thermoelectric device includes active elements containing thermoelectric materials of silicon, an alloy of silicon, a metal-silicide or silicon composite and an interconnection zone consisting of a metal interconnect and a re-crystallized phase consisting of material from the active thermoelectric elements. The metal interconnect is from a metal that does not form metal silicides in a solid state, has a certain solubility for components of the thermoelectric elements in the liquid phase and a low solubility of these components in the solid phase. The active thermoelectric elements are shaped with a first and a second contact interface. The interconnection between the different thermoelectric elements consists of at least two phases of material, one of which is mainly the metallic interconnection material, the other is formed by the re-crystallized components of the thermoelectric materials.

A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

The present specification relates to a thermoelectric module protection circuit and a thermoelectric device including the same, and According to one aspect of the present specification, there is provided a thermoelectric device including: a thermoelectric module having a first surface providing a thermal stimulus to a user and a second surface opposite to the first surface, and including an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface and an electrode configured to electrically connect the N-type semiconductor and the P-type semiconductor, a power supply unit configured to output a predetermined current applied to the thermoelectric module to cause the thermoelectric module to perform a thermoelectric operation including an endothermic operation and an exothermic operation so that the thermal stimulus is provided through the first surface, a voltage monitoring unit configured to monitor an output voltage of the thermoelectric module, wherein the output voltage reflects a temperature difference between the first surface and the second surface, a voltage comparison unit configured to compare the output voltage and a reference voltage, and output an application control signal which instructs whether to apply power to the thermoelectric module to stop supplying the power to the thermoelectric module when the temperature difference is greater than or equal to a threshold value, and a power controller configured to adjust whether to apply the power to the thermoelectric module based on the application control signal.

A thermoelectric device includes thermoelectric groups connected in series between first and second terminals provided in a plate shape deformable to a curved surface, having a first surface and an opposite second surface as a main surface, and configured to receive power from the outside. The thermoelectric groups include a first thermoelectric group configured to provide any one of a feeling of coldness and a feeling of warmth toward the first surface when the power is applied, an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface, and an electrode configured to alternately connect an N-type semiconductor and a P-type semiconductor and disposed adjacent to any one surface of the main surface. The thermoelectric filters also include a second thermoelectric group providing the other of the feeling of coldness and the feeling of warmth toward the first surface when the power is applied.