A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

An element, including a first electrode, an intermediate layer, and a second electrode, the first electrode, the intermediate layer, and the second electrode being laminated in this order, wherein the intermediate layer has flexibility, and wherein a deformation amount on a side of the first electrode of the intermediate layer is different from a deformation amount on a side of the second electrode of the intermediate layer when a pressure is applied to the intermediate layer in a direction orthogonal to a surface of the intermediate layer.

Methods are described for constructing a mechanical resonating structure by applying an active layer on a surface of a compensating structure. The compensating structure comprises one or more materials having an adaptive resistance to deform that reduces a variance in a resonating frequency of the mechanical resonating structure, wherein at least the active layer and the compensating structure form a mechanical resonating structure having a plurality of layers of materials A thickness of each of the plurality of layers of materials results in a plurality of thickness ratios therebetween.

A method for treating a layer of composition ABO.sub.3, wherein A is a first material composition consisting of at least one element selected from the group consisting of: Li, Na, K, H, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag, and Tl, and wherein B is a second material composition consisting of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr, and Tl, is described. The method includes implanting an ionic species into a donor substrate of the composition ABO.sub.3, thereby forming a weakened zone delineating the layer, detaching the layer from the donor substrate along the weakened zone, and exposing the detached layer to a medium containing ions of a constituent element A, such that the ions penetrate into the layer.

A vibrator includes: a base portion; a vibrating arm including an arm portion which extends from the base portion, and a weight portion which is located on a tip end side of the arm portion and which has a first main surface and a second main surface that are in a front-back relationship; and a weight film disposed at the first main surface of the weight portion. The first main surface includes a planar surface and an inclined surface inclined with respect to the planar surface. A method for manufacturing a vibrator includes: a preparation step of preparing the above-described vibrator; and a removing step of removing a part of the weight film by emitting an energy ray to the weight film. In the removing step, the weight film disposed at the planar surface is removed and the weight film disposed at the inclined surface is not removed by emitting the energy ray to the weight film from a normal direction of the planar surface.

A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detachment chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer.

An elastic wave device includes a piezoelectric substrate, an IDT electrode including a first electrode layer located on the piezoelectric substrate and including one of Mo and W as a main component and a second electrode layer laminated on the first electrode layer and including Cu as a main component, and a dielectric film located on the piezoelectric substrate and covering the IDT electrode. The piezoelectric substrate is made of lithium niobate. The dielectric film is made of silicon oxide. The elastic wave device utilizes Rayleigh waves propagating along the piezoelectric substrate.

An apparatus 10 for poling piezoelectric material includes a platen 22 which holds a sample 20 of piezoelectric material to be poled and a stage 30 to which the platen is mounted. The stage 30 is arranged to selectively move the platen 22 and thereby the sample 20 which the platen 22 holds. The platen 22 is movable by the stage 30 selectively between a first position and a second position. A corona source 40 generates a corona to which the sample 20 is exposed when the platen 22 is moved to the first position by the stage 30. An electrostatic voltmeter 60 having a probe 62 measures a surface potential of the sample 20 when the platen 22 is moved to the second position by the stage 30.

Methods, systems, and apparatus for using a two-dimensional distributed mode actuator. One of the systems includes a transducer adapted to create a force to cause vibration of a load to generate sound waves, the transducer having a first width along a first axis; a transfer portion connected to the transducer along a first side parallel to the first axis, and having a second width along the first axis that is less than the first width; and a stub connected to the transfer portion along a second side of the transfer portion that is parallel to the first axis and an opposite side from the first side connected to the transducer, having a third width that is greater than the second width, and having a surface adapted to connect to the load to transfer the force received from the transducer through the transfer portion to the load.

A method for producing a layer of composition AA′BO.sub.3, wherein A consists of at least one element selected from the group consisting of: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B consists of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr and Tl, is described. The method includes providing a donor substrate of composition ABO.sub.3, forming a layer of composition ABO.sub.3 by thinning the donor substrate, and exposing the layer of composition ABO.sub.3 to a medium containing ions of an element A′ belonging to the same list of elements as A, A′ being different from A, such that the ions penetrate into the layer of composition ABO.sub.3 to form the layer of composition AA′BO.sub.3.