An electroactive device may include (1) an electroactive polymer element having a first surface and a second surface opposite the first surface, the electroactive polymer element comprising a nanovoided polymer material, (2) a primary electrode abutting the first surface of the electroactive polymer element, and (3) a secondary electrode abutting the second surface of the electroactive polymer element. The electroactive polymer element may be deformable from an initial state to a deformed state by application of an electrostatic field produced by a potential difference between the primary electrode and the secondary electrode. Various other devices, systems, and methods are also disclosed.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

A piezoelectric device includes a first substrate including a first surface on which piezoelectric elements and a common terminal coupled to the piezoelectric elements are placed, a second substrate including a second surface on which a common connecting terminal coupled to a control circuit is placed, a third substrate placed between the first substrate and the second substrate and including a third surface joined to the first surface and a fourth surface facing the second surface, and bonding portions bonding the second substrate and the third substrate by an adhesive, wherein the third substrate includes a first through hole penetrating from the third surface to the fourth surface and a first through electrode provided in the first through hole and coupled to the common terminal, the common connecting terminal is coupled to the first through electrode and electrically coupled to the common terminal via the first through electrode, and the second substrate includes a wall suppressing an outflow of the adhesive on the second surface facing the third substrate.

An electronic device includes a first substrate including a first face on which a common terminal to be coupled to the element is disposed, and a second substrate which has a second face and a third face, and which is arranged so that the second face faces to the first face, wherein the second substrate has a first through hole at a position corresponding to the common terminal, the first through hole penetrating from the second face to the third face, a first through electrode electrically coupled to the common terminal is disposed in the first through hole, and a void is disposed in a part of the first through electrode.

An electronic device includes a first substrate including a first face on which a common terminal to be coupled to the element is disposed, and a second substrate which has a second face and a third face, and which is arranged so that the second face faces to the first face, wherein the second substrate has a first through hole at a position corresponding to the common terminal, the first through hole penetrating from the second face to the third face, a first through electrode electrically coupled to the common terminal is disposed in the first through hole, and a void is disposed in a part of the first through electrode.

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.

A sensing film includes a base layer, a piezoelectric layer formed on the base layer, and a first electrode and a second electrode formed on the piezoelectric layer. The first and second electrodes are spaced apart and electrically insulated from each other. The first electrode includes a first connecting portion and a number of first extending portions coupled to the first connecting portion. The second electrode includes a second connecting portion and a number of second extending portions coupled to the second connecting portion. The first connecting portion and the second connecting portion are spaced apart and face each other. The first extending portions extend from a side of the first connecting portion toward the second connecting portion. The second extending portions extend from a side of the second connecting portion toward the first connecting portion. The first extending portions and the second extending portions are alternately arranged.

A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.