H10N30/08

SAW modulators and light steering methods

An electro-holographic light field generator device is disclosed. The light field generator device has an optical substrate with a waveguide face and an exit face. One or more surface acoustic wave (SAW) optical modulator devices are included within each light field generator device. The SAW devices each include a light input, a waveguide, and a SAW transducer, all configured for guided mode confinement of input light within the waveguide. A leaky mode deflection of a portion of the waveguided light, or diffractive light, impinges upon the exit face. Multiple output optics at the exit face are configured for developing from each of the output optics a radiated exit light from the diffracted light for at least one of the waveguides. An RF controller is configured to control the SAW devices to develop the radiated exit light as a three-dimensional output light field with horizontal parallax and compatible with observer vertical motion.

Wafer level chip scale filter packaging using semiconductor wafers with through wafer vias

A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.

Piezoelectric device and method for manufacturing the same, and display apparatus

A piezoelectric device includes: a base having at least one hole, a heat conductive portion disposed in the at least one hole and in contact with a wall of the at least one hole, and at least one piezoelectric sensor disposed on the base. A thermal conductivity of the heat conductive portion is greater than a thermal conductivity of the base. Each piezoelectric sensor includes: a first electrode, a piezoelectric pattern made of a piezoelectric material and a second electrode that are sequentially stacked in a thickness direction of the base.

Piezoelectric substrate, piezoelectric woven fabric, piezoelectric knitted fabric, piezoelectric device, force sensor, and actuator

The present invention provides: a piezoelectric substrate which includes a first piezoelectric body having an elongated shape and helically wound in one direction, and which does not include a core material, in which the first piezoelectric body includes a helical chiral polymer (A) having an optical activity; in which the length direction of the first piezoelectric body is substantially parallel to the main direction of orientation of the helical chiral polymer (A) included in the first piezoelectric body; and in which the first piezoelectric body has a degree of orientation F, as measured by X-ray diffraction according to the following Equation (a), within the range of 0.5 or more but less than 1.0:
degree of orientation F=(180°−α)/180°  (a)
(in which α represents the half-value width of the peak derived from the orientation).

Piezoelectric substrate, piezoelectric woven fabric, piezoelectric knitted fabric, piezoelectric device, force sensor, and actuator

The present invention provides: a piezoelectric substrate which includes a first piezoelectric body having an elongated shape and helically wound in one direction, and which does not include a core material, in which the first piezoelectric body includes a helical chiral polymer (A) having an optical activity; in which the length direction of the first piezoelectric body is substantially parallel to the main direction of orientation of the helical chiral polymer (A) included in the first piezoelectric body; and in which the first piezoelectric body has a degree of orientation F, as measured by X-ray diffraction according to the following Equation (a), within the range of 0.5 or more but less than 1.0:
degree of orientation F=(180°−α)/180°  (a)
(in which α represents the half-value width of the peak derived from the orientation).

Microphone device with single crystal piezoelectric film and method of forming the same

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

Microphone device with single crystal piezoelectric film and method of forming the same

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

PIEZOELECTRIC SENSOR WITH INCREASED SENSITIVITY AND DEVICES HAVING THE SAME

A piezoelectric sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and extending to an unsupported distal end. An electrode is disposed on or in the proximal portion of the beam and has an outer boundary with a shape substantially corresponding to a contour line of a strain distribution plot for the cantilever beam resulting from a force applied to the cantilever beam.

Plate wave devices with wave confinement structures and fabrication methods
11545955 · 2023-01-03 · ·

A micro-electrical-mechanical system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

Method for manufacturing piezoelectric instrumentation devices with 3D structures using additive manufacturing

A method for fabricating a piezoelectric transducer includes depositing a layer of a piezoelectric material on a base using a depositor and applying an electric field to the layer of deposited piezoelectric material in defined locations using an electrode to sinter and pole the deposited piezoelectric material at those defined locations to form a layer of the piezoelectric transducer in a selected shape and with a selected dipole direction.