An elastic wave device includes a piezoelectric substrate with first and second main surfaces internally facing each other, an elastic-wave element that includes an interdigital transducer electrode provided on or in the first main surface of the piezoelectric substrate, and a first protective film that is provided on the first main surface of the piezoelectric substrate so as to cover the IDT electrode. The IDT electrode includes a main electrode layer made of a metal having a density higher than that of the first protective film. The piezoelectric substrate has a thickness of about 0.35 mm or smaller, and irregularities are located on the second main surface.

The present invention relates to a method for producing an intravascular ultrasonic transducer and a structure for same, the method for producing a ultrasonic transducer producing a single element by: forming a piezoelectric element lapped according to a previously set thickness; depositing conductive material on the lapped surface of the piezoelectric element; forming a matched layer and a rear surface layer by casting the front and rear surfaces of the piezoelectric element to which conductive material has been deposited; lapping according to a previously set thickness; and dicing the bulk material, which is a stack of a matched layer, a piezoelectric element and a rear surface layer, along the stack direction so that the size of the element is less than the critical size for intravascular ultrasound (IVUS).

A method for manufacturing a vibration actuator includes forming an elastic body integrally with a projection protruding from a surface of the elastic body, by press working. Forming the elastic body includes forming a bonding portion surrounding the projection, forming a contact portion at a top portion of the projection, forming a spring portion between the contact portion and the bonding portion, and forming a standing portion having a hollow structure, between the spring portion and the contact portion, so that the standing portion has a ring shape in a cross-sectional view in a direction parallel to the surface of the elastic member and that a space surrounded by the contact portion, the spring portion, and the standing portion. The spring portion is formed by press working, and the bonding portion is formed by press working.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

An input device includes a substrate structure, a conductive adhesive layer, and a piezoelectric structure. The conductive adhesive layer is disposed over the substrate structure. The conductive adhesive layer includes an adhesive portion and a plurality of metal particles, and the plurality of metal particles are substantially aligned in a first direction. The piezoelectric structure is disposed over the conductive adhesive layer. The piezoelectric structure extends in a second direction that is perpendicular to the first direction.

A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.

A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.