H10N30/302

Device and method for sensing underwater sound pressure

A hydrophone may include a first piezoelectric cable including alternating sections of positive polarity and negative polarity, and a second piezoelectric cable including alternating sections of negative polarity and positive polarity. At least a portion of each section of positive polarity of the first piezoelectric cable may be bonded or adhered to at least a portion of a section of negative polarity of the second piezoelectric cable. A method of manufacturing a hydrophone may include winding or coiling a first piezoelectric cable and a second piezoelectric cable at the same time to create a series of wound sections including cables, the wound sections alternating with a series of not wound sections including the cables.

Energy harvesting for sensor systems

Described herein is an energy harvesting system comprising a transducer and a processor. The transducer generates an electric signal from ambient energy. The processor is configured to process the electric signal to perform pattern recognition of the electric signal so as to determine and output a characteristic of a source of the ambient energy. The pattern recognition comprises statistical analysis and frequency domain analysis.

PIEZOELECTRIC ELEMENT

A piezoelectric element includes a piezoelectric body including a piezoelectric material, and a first electrode and a second electrode provided on the piezoelectric body. The piezoelectric body includes a base and a plurality of drivers. The base includes a first main surface and a second main surface opposing each other. The plurality of drivers is arranged on the first main surface in such a way as to be separate from each other. Each of the plurality of drivers includes a third main surface contacting the first main surface and a fourth main surface opposing the third main surface. The base includes a plurality of first regions in which the plurality of drivers is provided and a second region provided between the first regions adjacent to each other. The base is curved.

TRANSDUCTION UNIT OF NON-CONTACT HUMAN SLEEP PHYSIOLOGICAL PARAMETER DETECTION SENSOR

A transduction unit of a non-contact human sleep physiological parameter detection sensor includes a circuit board, a piezoelectric film and conductive adhesives, wherein the piezoelectric film includes a film sheet and two electrodes, which are respectively arranged on two side faces of the film sheet; the piezoelectric film is attached to the circuit board; and the two electrodes of the piezoelectric film are respectively electrically connected to two exposed pad electrodes on the circuit board by means of the conductive adhesives.

LEADLESS PRESSURE SENSORS

Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
11609131 · 2023-03-21 · ·

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.

DEFORMATION DETECTION SENSOR
20220344572 · 2022-10-27 ·

A deformation detection sensor is provided that includes a detection electrode, a first ground electrode, a piezoelectric film sandwiched between the detection electrode and the first ground electrode, a substrate on which the detection electrode and a second ground electrode are formed, a wiring connected to the detection electrode, and a joint member that joins the wiring and the detection electrode.

Ultrasonic transducer device, acoustic biometric imaging system and manufacturing method
11610427 · 2023-03-21 · ·

An ultrasonic transducer device for use in an acoustic biometric imaging system, the ultrasonic transducer device comprising: a first piezoelectric element having a first face, a second face opposite the first face, and side edges extending between the first face and the second face; a first transducer electrode on the first face of the first piezoelectric element; a second transducer electrode on the second face of the first piezoelectric element; and a spacer structure leaving at least a portion of the first transducer electrode of the first piezoelectric element uncovered.

ORGANIC GATE TFT-TYPE STRESS SENSORS AND METHOD OF MAKING AND USING THE SAME
20220344570 · 2022-10-27 ·

A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.

Combined corrugated piezoelectric microphone and corrugated piezoelectric vibration sensor

A MicroElectroMechanical Structure (MEMS) accelerometer includes a piezoelectric membrane including at least one electrode and an inertial mass, the piezoelectric membrane being affixed to a holder; and a circuit for evaluating sums and differences of signals associated with the at least one electrode to determine a three-dimensional acceleration direction, wherein the at least one electrode includes a segmented electrode, and wherein the segmented electrode includes four segmentation zones.