A vibration device includes a protective cover that transmits light with a predetermined wavelength, a first cylindrical body that holds the protective cover at one end, a plate-shaped plate spring that supports the other end of the first cylindrical body, a second cylindrical body that supports, at one end, a portion of the plate spring in an outer side portion of a portion that supports the first cylindrical body, and a plurality of piezoelectric elements on side surfaces of the second cylindrical body and that vibrates in a direction perpendicular to a penetrating direction of the second cylindrical body.

A piezoelectric film layered structure includes a base, and a ScAlN film formed on the base. The ScAlN film has an unpaired electron density within a range between 1.7×10.sup.18 electrons/cm.sup.3, inclusive, and 1.1×10.sup.19 electrons/cm.sup.3, inclusive.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first dielectric layer over a substrate and forming a first recess in the first dielectric layer. The method also includes conformally forming a first movable membrane over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion in the first recess. The method further includes forming a second dielectric layer over the first movable membrane and partially removing the substrate, the first dielectric layer, and the second dielectric layer to form a cavity. In addition, the first corrugated portion of the first movable membrane is partially sandwiched between the first dielectric layer and the second dielectric layer.

A piezoelectric microelectromechanical structure is provided with a piezoelectric stack having a main extension in a horizontal plane and a variable section in a plane transverse to the horizontal plane. The stack is formed by a bottom-electrode region, a piezoelectric material region arranged on the bottom-electrode region, and a top-electrode region arranged on the piezoelectric material region. The piezoelectric material region has, as a result of the variable section, a first thickness along a vertical axis transverse to the horizontal plane at a first area, and a second thickness along the same vertical axis at a second area. The second thickness is smaller than the first thickness. The structure at the first and second areas can form piezoelectric detector and a piezoelectric actuator, respectively.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

An energy harvesting circuit is disclosed and comprises one or more electrical loads that consume direct current (DC) power, a rectifier, and a hybrid acoustic absorber. The rectifier comprises one or more active switching elements that are driven by a gate drive voltage. The hybrid acoustic absorber comprises a diaphragm and a voice coil. The diaphragm is constructed at least in part of a piezoelectric material. The piezoelectric material is configured to generate a diaphragm voltage in response to sound waves deforming the diaphragm. The diaphragm voltage is at least equal to the gate drive voltage to drive the one or more active switching elements of the rectifier. The voice coil is attached to the diaphragm and configured to generate a voice coil voltage that is less than the gate drive voltage of the one or more active switching elements.

A piezoelectric element includes a first electrode disposed at a base body, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The piezoelectric layer includes a first piezoelectric layer containing a complex oxide having a perovskite structure that contains lead, zirconium, and titanium and a second piezoelectric layer containing a complex oxide having a perovskite structure that is denoted by formula (1) below. The first piezoelectric layer is disposed between the first electrode and the second piezoelectric layer and is preferentially oriented to (100) when the crystal structure of the first piezoelectric layer is assumed to be pseudo-cubic,
xPb(Mg,Nb)O.sub.3-yPbZrO.sub.3-zPbTiO.sub.3  (1)
where in formula (1), 0<x,y,z<1 and x+y+z=1.

A microphone including a casing having a front wall, a back wall, and a side wall joining the front wall to the back wall, a transducer mounted to the front wall, the transducer including a substrate and a transducing element, the transducing element having a transducer acoustic compliance dependent on the transducing element dimensions, a back cavity cooperatively defined between the back wall, the side wall, and the transducer, the back cavity having a back cavity acoustic compliance. The transducing element is dimensioned such that the transducing element length matches a predetermined resonant frequency and the transducing element width, thickness, and elasticity produces a transducer acoustic compliance within a given range of the back cavity acoustic compliance.

An electronic device comprises a CMOS substrate having a first surface and a second surface opposite the first surface. A plurality of ultrasonic transducers is provided having a transmit/receive surface. A contact surface is piezoelectrically associated with the plurality of ultrasonic transducers and is formed on the first surface of the CMOS substrate. The plurality of ultrasonic transducers is disposed on the second surface of the CMOS substrate, with the transmit/receive side attached to the second surface thereof such that the CMOS substrate is between the plurality of ultrasonic transducers and the platen. An image sensing system is also provided, together with a method for ultrasonic sensing in the electronic device.