A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

A piezoelectric element, in which a piezoelectric body, and a vibrating plate having [111]-oriented single crystal silicon as a vibrating material are laminated is provided. In addition, a manufacturing method of a piezoelectric element including: cutting out a vibrating material to be used in the vibrating plate from a [111]-oriented single crystal silicon wafer; and laminating a piezoelectric body and the vibrating plate is provided.

A heat dissipation system for an optical module, related to communication fittings technologies, is provided to improve heat dissipation efficiency of the optical module. The heat dissipation system for an optical module includes a circuit card on which at least one optical module is mounted, where the optical module includes a housing and a laser disposed inside the housing. A first heat dissipation apparatus is fixedly disposed on the circuit card. A heat dissipation window is provided in an area that is above the laser and on the housing of the optical module. The first heat dissipation apparatus performs heat dissipation on the heat dissipation window.

In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.

A piezoelectric element includes: a piezoelectric body; and a vibrating plate including single crystal silicon having anisotropy having orientation with a relatively high Young's modulus and orientation with a relatively low Young's modulus (hereinafter, referred to as low Young's modulus orientation) as a vibrating material, in which the piezoelectric body and the vibrating plate are laminated on each other so that the low Young's modulus orientation is in a direction along a high expansion and contraction direction among a direction where a degree of expansion and contraction caused according to a support structure of the piezoelectric body is relatively high (hereinafter, referred to as high expansion and contraction direction) and a direction where a degree thereof is relatively low.

A piezoelectric element includes: a piezoelectric body; and a vibrating plate including single crystal silicon having anisotropy having orientation with a relatively high Poisson's ratio and orientation with a relatively low Poisson's ratio (hereinafter, referred to as low Poisson's ratio orientation) as a vibrating material, in which the piezoelectric body and the vibrating plate are laminated on each other so that the low Poisson's ratio orientation is in a direction along a high expansion and contraction direction among a direction where a degree of expansion and contraction caused according to a support structure of the piezoelectric body is relatively high (hereinafter, referred to as high expansion and contraction direction) and a direction where a degree thereof is relatively low.

A receiving transducer includes: a flexible portion; a piezoelectric film provided on the flexible portion; a first electrode provided between a first surface of the flexible portion, on which the piezoelectric body is provided, and a second surface of the piezoelectric film that is a surface not facing the flexible portion; and a second electrode that is provided between the first and second surfaces and that faces the first electrode with a gap interposed therebetween in plan view as viewed from the thickness direction of the flexible portion.

Disclosed is a method of fabricating an electromechanical transducer film. The method includes treating a surface of a first electrode to be liquid-repellent, the first electrode being formed on one surface of a substrate, irradiating the surface of the first liquid-repellent electrode with an energy ray while moving an irradiation position in accordance with a shape of the electromechanical transducer film to be formed and a shape of an alignment mark to be formed, and forming the alignment mark by applying an application liquid to an area including a portion irradiated with the energy ray in accordance with the shape of the alignment mark in the irradiating step, the application liquid being applied by an inkjet method.

An ultrasonic transducer includes a backing element, an active element overlying the backing layer, and a matching element overlying the active element, the matching element having an inner surface that contacts the active element and an outer surface with a non-homogeneous texture and/or material composition. The matching element may be formed by subtractive or deposition techniques.

A method for producing a piezoelectric film includes forming a metal film, recrystallizing a portion of the metal film by heating, forming an amorphous film of piezoelectric material on the metal film; and heating the amorphous film at a position of the recrystallized portion of the metal film.