Provided is an ultrasonic cutting element including a blade arm having a primary vibration plate and a blade portion fixed to one end of the primary vibration plate, a counter mass arm including one or more secondary vibration plates, a holding member to which vibration ends of the blade arm and the counter mass arm are respectively connected and which holds the blade arm and the counter mass arm in parallel, and a driving portion being a piezoelectric actuator that imparts ultrasonic vibrations to at least one of the primary vibration plate or the secondary vibration plate, in which the blade arm and the counter mass arm respectively bending-vibrate in a primary surface direction in a resonant mode in which the arms vibrate in mutually opposite phases as flexural vibrators.

A method for producing a multi-layer electrode system includes providing a carrier substrate having a recess in a top side of the carrier substrate. At least one wall of the recess is inclined in relation to a bottom side of the carrier substrate, which is opposite to the top side. The method also includes applying a multi-layer stack, which includes at least a first electrode layer, a second electrode layer, and a piezoelectric layer arranged between the first electrode layer and the second electrode layer, to the top side of the carrier substrate. At least the wall and a bottom of the recess are covered by at least a portion of the multi-layer stack.

In the composite substrate 10, the piezoelectric substrate 12 and the support substrate 14 are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate 12 is a negatively-polarized surface 12a and another surface of the piezoelectric substrate 12 is a positively-polarized surface 12b. An etching rate at which the negatively-polarized surface 12a is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface 12b is etched with the strong acid. The positively-polarized surface 12b of the piezoelectric substrate 12 is directly bonded to the support substrate 14. The negatively-polarized surface 12a of the piezoelectric substrate 12 may be etched with the strong acid.

An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.

In the composite substrate, the piezoelectric substrate and the support substrate are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate is a negatively-polarized surface and another surface of the piezoelectric substrate is a positively-polarized surface. An etching rate at which the negatively-polarized surface is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface is etched with the strong acid. The positively-polarized surface of the piezoelectric substrate is directly bonded to the support substrate. The negatively-polarized surface of the piezoelectric substrate may be etched with the strong acid.

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate, the piezoelectric film including an aluminum nitride film containing a II-group or XII-group element and a IV-group or V-group element, a concentration of the IV-group or V-group element being higher than a concentration of the II-group or XII-group element in a middle region in a thickness direction, the concentration of the II-group or XII-group element being higher than the concentration of the IV-group or V-group element in at least one of end regions in the thickness direction; and a lower electrode and an upper electrode facing each other across the piezoelectric film.

A piezoelectric thin film contains potassium sodium niobate represented by general formula (K.sub.1-xNa.sub.x)NbO.sub.3 and CaTiO.sub.3, wherein the lattice spacing calculated from the diffraction peak of the (001) plane in an X-ray diffraction profile of the piezoelectric thin film is 3.975 ? or less, and the ratio I.sub.101/I.sub.001 of the diffraction peak intensity I.sub.101 of the (101) plane to the diffraction peak intensity I.sub.001 of the (001) plane in the X-ray diffraction profile of the piezoelectric thin film 3 satisfies the relationship log.sub.10(I.sub.101/I.sub.001)??2.10.

The invention relates to a method for preparing a sol-gel solution which can be used to prepare a barium titanate ceramic doped with hafnium and/or with at least one lanthanide element, comprising the following steps: a) a step to place a first mixture comprising a barium carboxylate and a diol solvent in contact with a second mixture comprising a titanium alkoxide and a hafnium alkoxide and/or an alkoxide of a lanthanide element in a monoalcohol solvent; b) a step to distil the mixture resulting from step a) to remove at least part of the monoalcohol solvent; c) a step to add acetic acid, under heat, to the distilled mixture of step b).

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Provided is an ultrasonic cutting element including a blade arm having a primary vibration plate and a blade portion fixed to one end of the primary vibration plate, a counter mass arm including one or more secondary vibration plates, a holding member to which vibration ends of the blade arm and the counter mass arm are respectively connected and which holds the blade arm and the counter mass arm in parallel, and a driving portion being a piezoelectric actuator that imparts ultrasonic vibrations to at least one of the primary vibration plate or the secondary vibration plate, in which the blade arm and the counter mass arm respectively bending-vibrate in a primary surface direction in a resonant mode in which the arms vibrate in mutually opposite phases as flexural vibrators.