A base end of a flexible plate-like structure body (111) having a first attribute is fixed to a pedestal (310) and a leading end thereof is connected to a connector between different attributes (112). Base end of a flexible plate-like structure body (113, 114) having a second attribute is connected to the connector between different attributes (112) and leading end thereof is given as free ends. Weight body (211, 212, 213) is connected to the lower surface of the connector between different attributes (112) and the leading-end lower surface of the plate-like structure body (113, 114) having the second attribute. When vibration energy is applied to the pedestal (310), the weight body (211, 212, 213) undergoes vibration, resulting in deformation of each of the plate-like structure bodies (111, 113, 114). The deformation energy is taken out by a charge generating element (400) such as a piezoelectric element to generate electric power. The plate-like structure body (111) having the first attribute extends in a positive direction of an Y axis, and the plate-like structure body (113, 114) having the second attribute extend in a negative direction of the Y axis. Therefore, a plurality of resonance systems different in resonance frequency exists concurrently along the same axis, thereby widening a frequency band capable of generating electric power.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an average value of the Poisson's ratios in the crystal plane exclusive to a maximum value of the Poisson's ratio in the crystal plane inclusive.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of a minimum value of the Poisson's ratio in the crystal plane inclusive to an average value of the Poisson's ratios in the crystal plane exclusive.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The piezoelectric element is disposed on the diaphragm so as to overlap an inner periphery of the pressure chamber in plan view, and has an inner edge on a center side of the pressure chamber with the inner periphery of the pressure chamber being sandwiched within the piezoelectric element in plan view. A shape of the inner edge of the piezoelectric element is such that in the smallest first rectangle, which includes the inner edge in plan view.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a vibration region that overlaps the pressure chamber in plan view. The piezoelectric element overlaps the vibration region in plan view. The diaphragm has a crystal plane {110} of a single crystal silicon base, or a crystal plane of a single crystal silicon base of which a Young's modulus and a Poisson's ratio vary according to a crystal orientation.

Materials and systems that enable high efficiency conversion of mechanical stress to electrical energy and methods of use thereof are described herein. The materials and systems are preferably used to provide power to medical devices implanted inside or used outside of a patient's body. For medical devices, the materials and systems convert electrical energy from the natural contractile and relaxation motion of a portion of a patient's body, such as the heart, lung and diaphragm, or via motion of body materials or fluids such as air, blood, urine, or stool. The materials and systems are capable of being bent, folded or otherwise stressed without fracturing and include piezoelectric materials on a flexible substrate. The materials and systems are preferably fashioned to be generally conformal with intimate apposition to complex surface topographies.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

A method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

A transparent ultrasonic transducer device includes a transparent substrate, one or more transparent conductors, and a patterned piezoelectric material layer or, alternatively, a transparent piezoelectric film and one or more transparent conductors, wherein the piezoelectric layer is formed on essentially an entire transparent substrate surface, including a central area of the transparent substrate.

A piezoelectric device including a pressure chamber, a piezoelectric element, and a vibration plate, in which the piezoelectric element is provided with a first electrode, a second electrode, and a piezoelectric layer, the vibration plate has a first portion overlapping the piezoelectric element and a second portion having a thickness smaller than that of the first portion and overlapping an inner peripheral surface of a side wall of the pressure chamber, a side surface of the piezoelectric element which intersects the vibration plate has a first surface inclined at a first angle, the vibration plate has a second surface, between the first portion and the second portion, inclined at a second angle smaller than the first angle, and an end portion of the second surface on the side wall side of the pressure chamber overlaps the side wall of the pressure chamber.