H10N30/88

Semiconductor stress sensor

A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

PIEZOELECTRIC BIOSENSOR AND RELATED METHOD OF FORMATION
20220376164 · 2022-11-24 ·

In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

Acoustic wave resonator

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Solid-State Quantum Memory

A solid-state quantum memory includes a vibrator supported in a displaceable (vibratable) manner on a substrate and a vibration exciter configured to excite the vibrator to vibrate. A rare-earth element is introduced into the vibrator and the introduced rare-earth element forms an electronic two-level system in the vibrator. The vibrator is supported on the substrate by a support. The substrate including a piezoelectric element formed from a piezoelectric material, as well as a first electrode and a second electrode formed by sandwiching the piezoelectric element, serves as the vibration exciter.

Sound transducer including a piezoceramic transducer element integrated in a vibratory diaphragm
11583896 · 2023-02-21 · ·

A sound transducer, in particular, for an ultrasonic sensor, includes a functional group, the functional group including a diaphragm cup and at least one electroacoustic transducer element. The sound transducer also includes a housing. The diaphragm cup includes a vibratory diaphragm and a circumferential wall, and at least one electroacoustic transducer element, the transducer element being configured to stimulate the diaphragm to vibrate and/or to convert vibrations of the diaphragm into electrical signals. The diaphragm cup is formed from a plastic material, the at least one transducer element being integrated into the vibratory diaphragm, in particular without an additional adhesive layer, the transducer element including a piezoceramic element.

Method of manufacturing a multi-layer PZT microactuator using wafer-level processing
11588098 · 2023-02-21 · ·

A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.

ACTUATOR DEVICE AND ACTUATOR SYSTEM

An actuator device includes a wiring substrate; a metal substrate; a first electrode unit provided to the metal substrate; a piezoelectric drive body disposed on the first electrode unit; a second electrode unit disposed on a first main surface of the piezoelectric drive body; a piezoelectric detection body disposed on the second electrode unit; a third electrode unit disposed on a third main surface of the piezoelectric detection body; a connection unit; an input unit; and an output unit. The connection unit is configured to be electrically connected to a reference potential on an outside such that a potential of the second electrode unit becomes the reference potential. The input unit is configured to input a drive signal to the first electrode unit from the outside. The output unit is configured to output an output signal generated in the piezoelectric detection body, to the outside from the third electrode unit.

Piezoelectric biosensor and related method of formation

In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

FORCE-MEASURING DEVICE ASSEMBLY FOR A PORTABLE ELECTRONIC APPARATUS, A PORTABLE ELECTRONIC APPARATUS, AND A METHOD OF MODIFYING A SPAN OF A SENSE REGION IN A FORCE-MEASURING DEVICE ASSEMBLY
20220364939 · 2022-11-17 ·

A force-measuring device (FMD) assembly for a portable electronic apparatus includes a mid-frame including a base portion, a sidewall portion, and a transition region between the base portion and the sidewall portion, and force-measuring devices coupled to the inner surface of the sidewall portion. The sidewall portion and the transition region are elongate along a longitudinal axis. FMDs are coupled to the inner surface at respective contact regions of the sidewall portion and are separated from each other along the longitudinal axis. Each of the FMDs includes strain-sensing element(s). Each of the FMDs corresponds to a respective sense region of the sidewall portion. The transition region includes a respective elongate slit or trough for each of the sense regions. The respective elongate slit or trough is elongate along the longitudinal axis. Adjacent elongate slits or troughs are separated by a respective rib.

Electronic component

An electronic component includes a support member, a piezoelectric film, and an interdigital transducer. The support member includes silicon as a primary component. The piezoelectric film is provided directly or indirectly on the support member. The interdigital transducer includes a plurality of electrode fingers. The plurality of electrode fingers are provided side by side separately from each other. The interdigital transducer is provided on the principal surface of the piezoelectric film. The film thickness of the piezoelectric film is about 3.5 λ or less, where λ denotes the wavelength of an acoustic wave determined by the electrode finger pitch of the interdigital transducer. In the support member, the high-impurity-concentration region is further from the piezoelectric film than the low-impurity-concentration region.