A magnetostrictive material includes a FeGaBa alloy that is represented by Expression (1),
Fe.sub.(100-x-y)Ga.sub.xBa.sub.y  (1) (in Expression (1), x and y are respectively a content rate (at. %) of Ga and a content rate (at. %) of Ba, and satisfy that y≤0.012x−0.168, y≤−0.05x+1.01, and y≥−0.04/7x+0.87/7).

Provided herein is a magnetostriction element having a large power output and a high power density. The magnetostriction element is comprised of a magnetostrictive material that is a monocrystalline alloy represented by the following formula (1),
Fe.sub.(100-α-β)Ga.sub.αX.sub.β,  Formula (1)
wherein α and β represent the Ga content (at %) and the X content (at %), respectively, X is at least one element selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Cu, and C, and the formula satisfies 5≤α≤40, and 0≤β≤1.

Exemplary practice of the present invention provides a magnetostrictive actuator characterized by linear force output and uniform magnetic biasing. A center bias magnet drives flux through series magnetostrictive bars in opposite directions while surrounding drive coils apply flux in the same direction through the bars. The net response is substantially linear with respect to the drive coil current. A second parallel set of magnetostrictive bars completes the flux path and adds to the actuator output force. Flux leakage between the parallel bars is compensated by a ferromagnetic shunt or by a tapered magnet providing uniform flux density down the length of the magnetostrictive bars. The closed flux path allows magnetic shielding of the entire actuator, if desired.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

Embodiments of a magnetic field sensor of the present disclosure includes magnetoelectric nanowires suspended above a substrate across electrodes without substrate clamping. This results in enhanced magnetoelectric coupling by reducing substrate clamping when compared to layered thin-film architectures. Accordingly, the magnetoelectric nanowires of the magnetic field sensor generate a voltage response in the presence of a magnetic field.

A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.

Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6(I)

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

A non-contact force type micro-rotating mechanism driven by attractive/repulsive force and a manufacturing method thereof, belongs to the field of intelligent micro devices, and mainly relates to micro electromechanical system technology, precision machining technology, precision assembly and the like. The mechanism adopts the interaction force between magnetic poles to replace the connection mode of a traditional through-hole bearing pressure spring positioning shaft, so that the component part structure of the mechanism can be optimized, and the space utilization rate can be greatly improved. Moreover, the attractive force type structure also has the effect of weakening the radial vibration of the motor, and the coaxiality of the rotor and the stator is improved in the running process of the motor. Meanwhile, the rotating mechanism does not directly output shaft work, a structure can be added on the disc-shaped rotor to realize different functions, an actuator and a control object are integrated.