In embodiments herein, probabilistic and deterministic logic devices include reduced symmetry materials, such as two-dimensional (2D) transition metal dichalcogenide (TMD) materials (e.g., NbSe.sub.2 or MoTe.sub.2).

In embodiments herein, probabilistic and deterministic logic devices include reduced symmetry materials, such as two-dimensional (2D) transition metal dichalcogenide (TMD) materials (e.g., NbSe.sub.2 or MoTe.sub.2).

A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.

This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.

In one aspect, a Hall Effect sensing element includes a Hall plate having a thickness less than about 100 nanometers an adhesion layer directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element includes a substrate that includes one of a semiconductor material or an insulator material, an insulation layer in direct contact with the substrate, an adhesion layer having a thickness in a range of about 0.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.

Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.

Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.

This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.