A Graphene Hall sensor (GHS) is provided with a modulated gate bias signal in which the modulated gate bias signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS. A bias current is provided through a first axis of the GHS. A resultant output voltage signal is provided across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency. An amplitude of the Hall voltage that does not include the offset voltage is extracted from the resultant output voltage signal.

A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

To provide a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion. The vibration element according to the present technology includes a vibration part in which a plurality of layers is laminated, the plurality of layers including a plurality of first elastic layers that is elastically deformed by electric field application, and at least one second elastic layer that is elastically deformed by magnetic field application. In accordance with the vibration element according to the present technology, a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion can be provided. In accordance with the vibration element according to the present technology, a vibration element having a structure capable of efficiently performing electric field-to-magnetic field conversion can be provided.

A miniature oxygen sensor makes use of paramagnetic properties of oxygen gas to provide a fast response time, low power consumption, improved accuracy and sensitivity, and superior durability. The miniature oxygen sensor disclosed maintains a sample of ambient air within a micro-channel formed in a semiconductor substrate. O.sub.2 molecules segregate in response to an applied magnetic field, thereby establishing a measureable Hall voltage. Oxygen present in the sample of ambient air can be deduced from a change in Hall voltage with variation in the applied magnetic field. The magnetic field can be applied either by an external magnet or by a thin film magnet integrated into a gas sensing cavity within the micro-channel. A differential sensor further includes a reference element containing an unmagnetized control sample. The miniature oxygen sensor is suitable for use as a real-time air quality monitor in consumer products such as smart phones.

In one aspect, a Hall Effect sensing element includes a Hall plate having a thickness less than about 100 nanometers an adhesion layer directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element includes a substrate that includes one of a semiconductor material or an insulator material, an insulation layer in direct contact with the substrate, an adhesion layer having a thickness in a range of about 0.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.

An assembly of Hall sensors provides the following: the three averaged values for the magnetic field components are assigned to the same point in space, at the center of the Hall sensor assembly. This allows for the instantaneous measurement of the full field vector. With the appropriate electrical connections of the Hall elements from opposing surfaces of each pair, undesired planar Hall effect is practically cancelled out.

A semiconductor device with high storage capacity and low power consumption is provided. The semiconductor device includes first to third conductors, first and second transistors, and an MTJ element. The MTJ element includes a free layer and a fixed layer. In the semiconductor device, the first conductor, the second conductor, the free layer, the fixed layer, the first and second transistors, and the third conductor are provided in this order from the bottom. In particular, in a plan view, the third conductor is positioned in a region overlapping with the first conductor. The first conductor is electrically connected to the second conductor, and the second conductor is electrically connected to the free layer and a first terminal of the first transistor. The fixed layer is electrically connected to a first terminal of the second transistor, and a second terminal of the first transistor is electrically connected to a second terminal of the second transistor and the third conductor. The first transistor and the second transistor each include a metal oxide in a channel formation region.

A semiconductor device with high storage capacity and low power consumption is provided. The semiconductor device includes first to third conductors, first and second transistors, and an MTJ element. The MTJ element includes a free layer and a fixed layer. In the semiconductor device, the first conductor, the second conductor, the free layer, the fixed layer, the first and second transistors, and the third conductor are provided in this order from the bottom. In particular, in a plan view, the third conductor is positioned in a region overlapping with the first conductor. The first conductor is electrically connected to the second conductor, and the second conductor is electrically connected to the free layer and a first terminal of the first transistor. The fixed layer is electrically connected to a first terminal of the second transistor, and a second terminal of the first transistor is electrically connected to a second terminal of the second transistor and the third conductor. The first transistor and the second transistor each include a metal oxide in a channel formation region.

A method of manufacturing a Hall element includes: forming a perovskite-type magnetic material layer on a substrate having a perovskite structure and composed of a compound having a lattice constant of 3.90-3.97 in pseudocubic notation; forming an insulator layer containing SrTiO.sub.3 on the perovskite-type magnetic material layer; and forming a Hall element containing InSb, GaAs, InAs or a solid solution thereof on the insulator layer.

A method of manufacturing a Hall element includes: forming a perovskite-type magnetic material layer on a substrate having a perovskite structure and composed of a compound having a lattice constant of 3.90-3.97 in pseudocubic notation; forming an insulator layer containing SrTiO.sub.3 on the perovskite-type magnetic material layer; and forming a Hall element containing InSb, GaAs, InAs or a solid solution thereof on the insulator layer.