There is provided a stacked film that allows flowing a write current and achieves a high-density and/or high-speed memory and a magnetoresistive effect element using the stacked film. A magnetic stacked film 10 is formed of a three-layered structure that includes a first ferromagnetic layer 12, an antiferromagnetic coupling layer 10a provided on the first ferromagnetic layer 12, and a second ferromagnetic layer 16 provided on the antiferromagnetic coupling layer 10a. The antiferromagnetic coupling layer 10a includes a first non-magnetic layer 13, an interlayer coupling layer 14, and a second non-magnetic layer 15. The interlayer coupling layer 14 is selected from a metal or an alloy including at least any one of Ir, Ru, and Rh. The first non-magnetic layer 13 and the second non-magnetic layer 15 are selected from a metal or an alloy including Pt.

There is provided a stacked film that allows flowing a write current and achieves a high-density and/or high-speed memory and a magnetoresistive effect element using the stacked film. A magnetic stacked film 10 is formed of a three-layered structure that includes a first ferromagnetic layer 12, an antiferromagnetic coupling layer 10a provided on the first ferromagnetic layer 12, and a second ferromagnetic layer 16 provided on the antiferromagnetic coupling layer 10a. The antiferromagnetic coupling layer 10a includes a first non-magnetic layer 13, an interlayer coupling layer 14, and a second non-magnetic layer 15. The interlayer coupling layer 14 is selected from a metal or an alloy including at least any one of Ir, Ru, and Rh. The first non-magnetic layer 13 and the second non-magnetic layer 15 are selected from a metal or an alloy including Pt.

A system and method for a logic device is disclosed. A first input nanotrack, a second input nanotrack and an output nanotrack are disposed over a substrate along a first axis. Output nanotrack is disposed between the input nanotracks. Each nanotrack have a first end and a second end. A connector nanotrack connects the first input nanotrack, the second input nanotrack, and the output nanotrack. An input value is defined at a first end of the input nanotracks by selectively nucleating a skyrmion at the first end. Presence of the skyrmion is indicative of a first value and absence of the skyrmion indictive of a second value. Nucleated skyrmion moves to the second end of the output nanotrack when a charge current is passed along the first axis. Presence of the skyrmion at the second end indicates an output value of the first value.

A system and method for a logic device is disclosed. A first input nanotrack, a second input nanotrack and an output nanotrack are disposed over a substrate along a first axis. Output nanotrack is disposed between the input nanotracks. Each nanotrack have a first end and a second end. A connector nanotrack connects the first input nanotrack, the second input nanotrack, and the output nanotrack. An input value is defined at a first end of the input nanotracks by selectively nucleating a skyrmion at the first end. Presence of the skyrmion is indicative of a first value and absence of the skyrmion indictive of a second value. Nucleated skyrmion moves to the second end of the output nanotrack when a charge current is passed along the first axis. Presence of the skyrmion at the second end indicates an output value of the first value.

In one aspect, a Hall Effect sensing element includes a Hall plate having a thickness less than about 100 nanometers an adhesion layer directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element includes a substrate that includes one of a semiconductor material or an insulator material, an insulation layer in direct contact with the substrate, an adhesion layer having a thickness in a range of about 0.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.

Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non-magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.

A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.

A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.