The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

The present invention relates to a plurality of phononic devices and a method of manufacturing thereof. In one embodiment, highly sensitive superconducting cryogenic detectors integrate phononic crystals into their architecture. The phononic structures are designed to reduce the loss of athermal phonons, resulting in lower noise and higher sensitivity detectors. This fabrication process increases the qp generation recombination rate, thus, reducing the noise equivalent power (NEP) without sacrificing the scalability. A plurality of phononic devices, such as a kinetic inductance detector (KID), a transition edge sensor (TES) bolometer, and quarterwave backshort, can be manufactured according to the methods of the present invention.

A method includes providing a film of a high-temperature superconductor compound on a flexible substrate, where a portion of the film has a first oxygen state, and exposing a portion of the film to a focused ion beam to create a structure within the film. The structure may result from the portion of the film being partially or completely removed. The structure may be a trench along the length or width of the film. The method may include annealing the exposed portion of the film to a second oxygen state. The oxygen content of the second oxygen state may be greater or less than the oxygen content of the first oxygen state.

Various fabrication methods are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

This disclosure relates to fabrication of step edges to fabricate Josephson junctions. A method comprises forming a layer of resist over the surface. The layer of resist comprises openings to expose a selected area of the surface, thereby forming two walls in the layer of resist on a perimeter of the selected area. The resist and the substrate are exposed to an ion beam, thereby etching the resist and the exposed areas of the surface. While exposing the resist and the substrate to the ion beam, the substrate is gradually rotated about an axis normal to the surface to thereby form two step edges at the respective two walls. Further, superconducting material is deposited onto the substrate in a meandering shape to form a path that crosses the two step edges multiple times and to form a Josephson junction each time the path crosses the step edges.

Certain embodiments involve processes or systems for creating various high-temperature superconductive structures or materials. For example, a method can involve depositing a first layer of boron and a second layer of un-doped amorphous carbon on a substrate. The un-doped amorphous carbon is ferromagnetic. The first layer of boron and the second layer of un-doped amorphous carbon are melted by a laser pulse to form a melted boron-doped amorphous carbon. The melted boron-doped amorphous carbon is quenched to create a quenched boron-doped amorphous carbon that is diamagnetic and superconducting. The quenched melted boron-doped amorphous carbon includes a mixture of sp3 bonded carbon atoms and sp2 bonded carbon atoms and a superconducting transition temperature of the quenched boron-doped amorphous carbon is much higher than diamond and increases based on a boron concentration. Undoped Q-carbon is ferromagnetic with Curie temperature above 500K.

Nano-scale junctions, wires, and junction arrays are created by using a focused high-energy ion beam to direct-write insulating or poorly conducting barriers into thin films of materials that are sensitive to disorder, including superconductors, ferromagnetic materials and semiconductors.

A high temperature superconductor, HTS, tape (100) for detecting a quench in a superconducting magnet. The HTS tape comprises an HTS layer (101) of HTS material supported by a substrate (102). The HTS layer is divided into a plurality of strips (104,105,107). The strips are connected (106) in series along an open path.