A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer. In operation, a voltage applied to the gate electrically conducting layer modulates a current through the semiconducting layer of the vertical Josephson junction.

A vertical Josephson Junction (JJ) qubit device that is fabricated from crystalline silicon material is provided. The JJ device has a substrate of epitaxial silicon, a lower superconducting electrode that is a superconducting region of the epitaxial silicon and an upper superconducting electrode of a metallic superconductor. The JJ device also has a junction layer. A section of the junction layer between the lower and upper superconducting electrodes forms a junction of the JJ device. Resonator and/or capacitor wiring of the JJ device is also fabricated using the metallic superconductor. The superconducting region is epitaxial silicon that is doped or implanted with boron or gallium. The substrate, the junction layer, and the implanted epitaxial silicon share a contiguous crystalline structure.

A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

An electronic component (10) is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (16, 18), for initializing the quantum mechanical state of a qubit.

The invention provides a spin qubit-type semiconductor device capable of achieving both high-speed spin manipulation and high integration, and an integrated circuit for the spin qubit-type semiconductor device. The spin qubit-type semiconductor device includes a body comprised of at least one of a semiconductor layer itself formed with a quantum dot and a structural portion arranged around the semiconductor layer, a gate electrode arranged at a position on the semiconductor layer, which faces the quantum dot, at least one micro magnet wholly or partly embedded in the body so that a first position condition in which the micro magnet is at a position near the quantum dot, a second position condition in which the position of a lower end of the micro magnet is located below the gate electrode, and a third position condition in which when viewed from above the body, the micro magnet is arranged at a position having no rotational symmetry with the quantum dot as the center of rotation are satisfied, and a static magnetic field applying unit capable of applying a static magnetic field to the quantum dot and the micro magnet.

A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. The device further includes an electron system coupled to the resonator structure, and a gate positioned proximal to a portion of the electron system. The electron system and the gate are configured to interrupt the resonator structure at one or more predetermined locations forming a switch. The gate is configured to receive a gate voltage and vary an inductance of the electron system based upon the gate voltage. The varying of the inductance induces the resonator structure to vary a strength of coupling between the first device and the second device.

To suppress a leakage current caused by a gate of a tunnel field effect transistor included in a silicon spin quantum bit device, the silicon spin quantum bit device is provided including a tunnel field effect transistor having a gate, a source, and a drain, a quantum gate operation mechanism for spin control, which is provided under the tunnel field effect transistor, and an inter-qubit coupler for coupling a channel of the tunnel field effect transistor with a channel of a tunnel field effect transistor included in another quantum bit device. Further, the gate is made wider in width than the channel and is partly formed on the inter-qubit coupler.

An elementary cell for a two-dimensional array of quantum dots, said elementary cell extending along a main plane and including: a plurality of sites occupied by quantum dots capable of confining at least one spin qubit and including at least: a first quantum dot, a second quantum dot adjacent to the first quantum dot in a first direction of the main plane, and a third quantum dot adjacent to the first quantum dot in a second direction of the main plane; and a first blocking site adjacent to the second and third quantum dots, towards which a spin qubit cannot be displaced.

A transistor structure, includes a buffer layer and a quantum well channel layer on top of the buffer layer. There is a barrier layer on top of the channel layer. There is a drain contact on a channel stack. A source contact is on a channel stack. A gate structure is located between the source contact and drain contact, comprising: an active gate portion having a bottom surface in contact with a bottom surface of the source and the drain contacts. A superconducting portion of the gate structure is in contact with, and adjacent to, an upper part of the active gate portion.