Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

An oxide superconducting wire includes a superconducting layer deposited on a substrate. The superconducting layer includes an oxide superconductor RE-Ba—Cu—O and artificial pinning centers ABO.sub.3, where RE is a rare earth element, A is Ba, Sr or Ca, and B is Hf, Zr, or Sn. In a TEM image of a cross-section of the superconducting layer, a standard deviation σ of an inclination angle of the artificial pinning center rods with respect to a cross-sectional direction of the superconducting layer is 6.13° to 11.73° and an average length of the artificial pinning center rods is 19.84 to 25.44 nm.

A strip conductor device includes first and second elongated strip conductor elements, each configured to be coupled at a coupling-in end to a contact device for coupling-in electric current and at a coupling-out end to a contact device for coupling-out electric current. The first elongated strip conductor element is a first strip conductor that has a substrate layer that carries a conductor layer that has barrier elements along a length of the conductor layer. The second elongated strip conductor element is a second strip conductor that has a substrate layer that carries a conductor layer that has barrier elements along a length of the conductor layer. The first strip conductor element forms a layer arrangement with the second strip conductor element and the coupling-in ends and the coupling-out ends of the first and second strip conductor elements lie one above the other.

An oxide superconducting wire includes a superconducting layer deposited on a substrate. The superconducting layer includes an oxide superconductor RE-Ba—Cu—O and artificial pinning centers ABO.sub.3, where RE is a rare earth element, A is Ba, Sr or Ca, and B is Hf, Zr, or Sn. In a TEM image of a cross-section of the superconducting layer, a standard deviation σ of an inclination angle of the artificial pinning center rods with respect to a cross-sectional direction of the superconducting layer is 6.13° to 11.73° and an average length of the artificial pinning center rods is 19.84 to 25.44 nm.

A device for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field along a curved or angled main path in a two-dimensional electron gas or in a thin superconducting layer, so that a different presence density is produced at electrical connections.

A method for fabricating a second generation high-temperature superconductor (2G-HTS) tape, including: (S1) depositing a superconducting thin film on a surface of a ductile metal substrate with a buffer layer; (S2) forming a micro-holes array pattern on a surface of the superconducting thin film by etching using a reel-to-reel dynamic femtosecond infrared laser etching system, where the micro-holes array pattern covers the superconducting thin film; (S3) depositing a superconducting thick film on the surface of the superconducting thin film; and (S4) depositing a silver protective layer and a copper stabilization layer on a surface of the superconducting thick film.

Proposed are a thin film having single crystallinity and an excellent crystal orientation property, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity. The technical gist of the present disclosure includes a thin film having single crystallinity, which is formed by depositing a polycrystalline second material on an upper portion of a substrate including a polycrystalline first material and which has a crystal orientation property satisfying the following Relational Expression 1 at a grain boundary, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity.

0°<FWHM.sub.2≤3°  [Relational Expression 1] (FWHM.sub.2 is a full width at half maximum of a distribution curve of a misorientation angle at the grain boundary of the thin film).

A superconducting material includes YBa.sub.2Cu.sub.3O.sub.7-δ and a nano-structured, preferably nanowires, WO.sub.3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

A superconducting material includes YBa.sub.2Cu.sub.3O.sub.7-δ and a nano-structured, preferably nanowires, WO.sub.3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

A 2nd generation high temperature superconductor wire that prevents mechanical destruction from the wire edge due to slitting. A 2G HTS wire according to embodiments of the present invention has a structure that prevents mechanical destruction from the wire edge. This can be accomplished by forming a striation at or near the edge of the wire where the buffer and superconducting layers are removed to prevent any propagation of edge cracks from damaging the HTS wire.