One example includes a superconducting current control system. The system includes an inductive coupler comprising a load inductor and a control inductor. The inductive coupler can be configured to inductively provide a control current from the control inductor to a superconducting circuit device based on a load current being provided through the load inductor. The system also includes a current control element comprising a superconducting quantum interference device (SQUID) array comprising a plurality of SQUIDs. The current control element can be coupled to the inductive coupler to control an amplitude of the load current through the load inductor, and thus to control an amplitude of the control current to the superconducting circuit device.

A parametric amplifier for amplifying an input signal includes a resonator comprising a Josephson junction. The Josephson junction comprises a first superconductor component, a second superconductor component and a semiconductor component. The semiconductor component is configured to enable coupling of the first and second superconductor components. The parametric amplifier further comprises a gate electrode configured to apply an electrostatic field to the semiconductor component of the Josephson junction for tuning the parametric amplifier. Such parametric amplifiers are useful for amplifying signals in the microwave frequency range. Tuning the junction by electrostatic gating may allow for improved scalability compared to tuning using magnetic flux. Also provided are the use of the parametric amplifier to amplify a signal; and a method of amplifying a signal.

A device includes a first substrate having a principal surface; a second substrate having a principal surface, in which the first substrate is bump-bonded to the second substrate such that the principal surface of the first substrate faces the principal surface of the second substrate; a circuit element having a microwave frequency resonance mode, in which a first portion of the circuit element is arranged on the principal surface of the first substrate and a second portion of the circuit element is arranged on the principal surface of the second substrate; and a first bump bond connected to the first portion of the circuit element and to the second portion of the circuit element, in which the first superconductor bump bond provides an electrical connection between the first portion and the second portion.

A quantum computing device includes a first chip having a first substrate and one or more qubits disposed on the first substrate. Each of the one or more qubits has an associated resonance frequency. The quantum computing device further includes a second chip having a second substrate and at least one conductive surface disposed on the second substrate opposite the one or more qubits. The at least one conductive surface has at least one dimension configured to adjust the resonance frequency associated with at least one of the one or more qubits to a determined frequency adjustment value.

A vertical Josephson junction device includes a substrate, and an epitaxial stack formed on the substrate. The vertical Josephson junction device includes a first superconducting electrode embedded in the epitaxial stack, and a second superconducting electrode embedded in the epitaxial stack, the second superconducting electrode being separated from the first superconducting electrode by a dielectric layer. In operation, the first superconducting electrode, the dielectric layer, and the second superconducting electrode form a vertical Josephson junction.

Materials with etch selectivity with respect to one another and one or more additional etch-stop layers are used in a Josephson junction structure to allow for integration with a Josephson junction with supporting structures such as resistors. Selective etch processes compatible with high volume manufacturing are used to pattern various layers of the Josephson junction structure to provide a Josephson junction, which is electrically coupled to a support structure.

Compositions comprising a) one or more amorphous superconductor layers bound to one or more flexible substrate layers, or b) one or more superconductor layers bound to one or more layers of a high dielectric material are disclosed. Furthermore, provided herein are articles comprising one or more compositions of the invention and method of manufacturing thereof.

High temperature superconductor (HTS)-based interconnect systems comprising a cable including HTS-based interconnects are described. Each of the HTS-based interconnects includes a first portion extending from a first end towards an intermediate portion and a second portion extending from the intermediate portion to a second end. Each of the HTS-based interconnects includes a substrate layer formed in the first portion, in the intermediate portion, and in the second portion, a high temperature superconductor layer formed in at least a sub-portion of the first portion, in the intermediate portion, and in the second portion, and a metallic layer formed in the first portion and in at least a sub-portion of the intermediate portion. The HTS-based interconnect system includes a thermal load management system configured to maintain the intermediate portion of each of the HTS-based interconnects at a predetermined temperature in a range between a temperature of 60 kelvin and 92 kelvin.

According to one embodiment, an electronic circuit includes a first nonlinear element, a second nonlinear element, and a third nonlinear element. The first nonlinear element includes a first element Josephson junction provided in a first region of a first surface including the first region and a second region. The second nonlinear element includes a second element Josephson junction provided in the second region. The third nonlinear element includes a Josephson junction circuit. At least a part of the Josephson junction circuit is provided on a second surface. The second surface is separated from the first surface in a first direction crossing the first surface. The second surface is along the first surface. The third nonlinear element is configured to be coupled with the first nonlinear element. The third nonlinear element is configured to be coupled with the second nonlinear element.

A device includes a first substrate having a principal surface; a second substrate having a principal surface, in which the first substrate is bump-bonded to the second substrate such that the principal surface of the first substrate faces the principal surface of the second substrate; a circuit element having a microwave frequency resonance mode, in which a first portion of the circuit element is arranged on the principal surface of the first substrate and a second portion of the circuit element is arranged on the principal surface of the second substrate; and a first bump bond connected to the first portion of the circuit element and to the second portion of the circuit element, in which the first superconductor bump bond provides an electrical connection between the first portion and the second portion.