Methods for mitigating microwave crosstalk and forming a component in a superconducting integrated circuit are discussed. Mitigating microwave crosstalk involves forming a microwave shield within the superconducting integrated circuit, the superconducting integrated circuit including a microwave sensitive component. The microwave shield is formed from a base layer and one or more sides, and the footprint of the microwave sensitive component is contained within the footprint of the microwave shielding base layer, with the one or more sides extending around at least a portion of the microwave sensitive component. Forming a component involves depositing a first metal layer, depositing a dielectric layer overlying the first metal layer, the dielectric layer comprising Nb.sub.2O.sub.5 that is deposited by atomic layer deposition, and depositing a second metal layer overlying the dielectric layer.

Provided is a thermal-insulated multi-walled pipe for superconducting power transmission that highly prevents intrusion of external heat due to radiation and has excellent thermal insulation property without using a superinsulation. A thermal-insulated multi-walled pipe for superconducting power transmission comprises: a superconducting cable; and a multi-walled pipe that houses the superconducting cable, wherein the multi-walled pipe is composed of a plurality of straight pipes, and at least one of the plurality of straight pipes has, at a surface thereof, a zinc or zinc alloy-plated layer having an average spangle size of 2.0 mm or less.

A superconducting wire holding structure includes a holding member made of a first material, a superconducting wire disposed inside the holding member, and a filler made of a second material different from the first material. The superconducting wire includes a substrate, an intermediate layer formed on the substrate, a superconducting layer formed on the intermediate layer, and a first protective layer and a second protective layer that are formed on the superconducting layer. The superconducting layer includes a first portion, a second portion, and a third portion between the first portion and the second portion along a longitudinal direction of the superconducting wire. The first protective layer is formed on the first portion, and the second protective layer is formed on the second portion. The filler is filled between the third portion and the holding member.

Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate an epitaxial Josephson junction transmon device are provided. According to an embodiment, a device can comprise a substrate. The device can further comprise an epitaxial Josephson junction transmon device coupled to the substrate. According to an embodiment, a device can comprise an epitaxial Josephson junction transmon device coupled to a substrate. The device can further comprise a tuning gate coupled to the substrate and formed across the epitaxial Josephson junction transmon device. According to an embodiment, a device can comprise a first superconducting region and a second superconducting region formed on a substrate. The device can further comprise an epitaxial Josephson junction tunneling channel coupled to the first superconducting region and the second superconducting region.

To provide a superconducting device capable of more accurately arranging a non-contact coupling circuit of a superconducting integrated circuit chip and a non-contact coupling circuit of a circuit board. The chip has a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof. The board has a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof, and is arranged to face the chip. The second electrode has a protrusion protruding toward the chip. The protrusion includes a flat upper surface. The first electrode has a flat surface and a first recess. The first recess is arranged to face the upper surface to be located inside the upper surface of the protrusion. A third superconducting material connecting the upper surface and the first recess.

To provide a superconducting device capable of more accurately arranging a non-contact coupling circuit of a superconducting integrated circuit chip and a non-contact coupling circuit of a circuit board. The chip has a first electrode made of a first superconducting material and a first non-contact coupling circuit on a surface thereof. The board has a second electrode made of a second superconducting material and a second non-contact coupling circuit on a surface thereof, and is arranged to face the chip. The second electrode has a protrusion protruding toward the chip. The protrusion includes a flat upper surface. The first electrode has a flat surface and a first recess. The first recess is arranged to face the upper surface to be located inside the upper surface of the protrusion. A third superconducting material connecting the upper surface and the first recess.

A production line device prepares a superconducting circuit layer on a substrate. The device prepares an under bump metallization (UBM) layer on an upper surface of the superconducting circuit layer. A superconducting connection is formed between the UBM layer and the superconducting circuit layer. The production device prepares a welding spot on an upper surface of the UBM layer to obtain a qubit assembly configured for a flip-chip superconducting quantum chip. A superconducting electrical connection is formed between the welding spot and the UBM layer.

Disclosed herein are assemblies for optical communication in quantum computing. For example, in some embodiments, a quantum computing assembly may include control circuitry having an optical interface to external electronic circuitry.

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.

Technologies for radiofrequency optimized interconnects for a quantum processor are disclosed. In the illustrative embodiment, signals are carried in coplanar waveguides on a surface of a quantum processor die. A ground ring surrounds the signals and is connected to the ground conductors of each coplanar waveguide. Wire bonds connect the ground ring to a ground of a circuit board. The wire bonds provide both an electrical connection from the quantum processor die to the circuit board as well as increased thermal coupling between the quantum processor die and the circuit board, increasing cooling of the quantum processor die.