System on chips (SoCs) based on a microprocessor or a neural processor (e.g., brain-inspired processor) electrically coupled with electronic memory devices and/or optically coupled with an optical memory device, along with embodiment(s) of a building block (an element) of the microprocessor/neural processor, the electronic memory device and the optical memory device are disclosed. It should be noted that a microprocessor can be replaced by a graphical processor.

Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 m thick layer of TiO.sub.2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

Electrical devices operating in a range of 273 C. to 100 C. are disclosed. The devices include an insulating substrate. A UO.sub.2+x crystal or oriented crystal UO.sub.2+x film is on a first portion of the substrate. The UO.sub.2+x crystal or film originates and hosts a non-equilibrium polaronic quantum phase-condensate. A first lead on a second portion of the substrate is in electrical contact with the UO.sub.2+x crystal or film. A second lead on a third portion of the surface is in electrical contact with the UO.sub.2+x crystal or film. The leads are isolated from each other. A UO.sub.2+x excitation source is in operable communication with the UO.sub.2+X crystal or film. The source is configured to polarize a region of the crystal or film thereby activating the non-equilibrium quantum phase-condensate. One source state causes the UO.sub.2+X crystal or film to be conducting. Another source state causes the UO.sub.2+x crystal or film to be non-conductive.

The present disclosure, in some embodiments, relates to a memory device. The memory device includes a bottom electrode via and a bottom electrode over a top of the bottom electrode via. A data storage layer is over the bottom electrode and a top electrode is over the data storage layer. A top electrode via is on an upper surface of the top electrode and is centered along a first line that is laterally offset from a second line centered upon a bottommost surface of the bottom electrode via. The first line is perpendicular to the upper surface of the top electrode and parallel to the second line.

A switching resistor comprises a dielectric layer disposed between a first electrode layer and a second electrode layer, the switching resistor having a high resistance state and a low resistance state. The switching resistor is responsive to a voltage bias, applied between the first electrode layer and the second electrode layer, wherein the voltage bias exceeds a threshold to switch from the high resistance state to the low resistance state. The switching resistor is sensitive to photo-illumination to reduce said threshold.

A method of manufacturing an electronic circuit comprises: providing an electronic circuit having a first configuration in which the circuit comprises a resistive element having a first resistance, and irradiating at least a part of the resistive element with electromagnetic radiation to change the resistance of the resistive element from the first resistance to a second resistance, the second resistance being lower than the first resistance. A method of storing data comprises: receiving a piece of data to be stored; determining a number according to the data; and irradiating at least part of a resistive element with that number of pulses of electromagnetic radiation to change a resistance of the resistive element from a first resistance to a second resistance, the second resistance being lower than the first resistance. A difference between the first resistance and the second resistance is dependent on the number. Corresponding circuits and data storage systems are disclosed.

A device for switchably influencing electromagnetic radiation includes a phase change material and an optically responsive structure. The phase change material is switchable between at least a first state and a second state. The first state and the second state have different electrical and/or magnetic properties. The optically responsive structure is in contact with the phase change material and has at least a first nanostructure and a second nanostructure. The first nanostructure is being different from the second nanostructure. The first nanostructure is optically responsive at a predetermined electromagnetic wavelength when the phase change material is in its first state, and non-responsive at the predetermined wavelength when the phase change material is in its second state. The second nanostructure is optically responsive at the predetermined electromagnetic wavelength when the phase change material is in its second state, and non-responsive at the predetermined wavelength when the phase change material is in its first state.

A light emitting diode memory includes a substrate, a tunneling structure, a current spreading layer, a first electrode layer and a second electrode layer. The tunneling structure is formed on the substrate. The tunneling structure includes first, second and third material layers. The current spreading layer is formed on the tunneling structure. The first electrode layer is formed on the substrate. The second electrode layer is formed on the current spreading layer. When a bias voltage applied to the first electrode layer and the second electrode layer is higher than a reset voltage, the light emitting diode memory is in a reset state. When the bias voltage is lower than a set voltage, the light emitting diode memory is in a set state. When the bias voltage is higher than a turn-on voltage, the light emitting diode memory emits a light beam.

A method of operating a device includes: (1) providing a film of a semimetal in a first topological phase; and (2) inducing interlayer shear oscillation of the semimetal within the film, wherein the interlayer shear oscillation induces the semimetal to transition to a different, second topological phase.

An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10.sup.10 Siemens/cm to about 10.sup.4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).