Patent classifications
H01C7/108
ELECTRICAL TRANSIENT MATERIAL AND METHOD FOR MAKING SAME
Electrical transient materials are disclosed. Furthermore, methods to provide electrical transient materials are disclosed. In one implementation, an apparatus includes an electrical transient material; and conductive particles disposed in the electrical transient material, at least one or more of the conductive particles have an irregular shape.
ELECTRICAL TRANSIENT MATERIAL AND METHOD FOR MAKING SAME
Electrical transient materials are disclosed. Furthermore, methods to provide electrical transient materials are disclosed. In one implementation, an apparatus includes an electrical transient material; and conductive particles disposed in the electrical transient material, at least one or more of the conductive particles have an irregular shape.
BASE METAL ELECTRODES FOR METAL OXIDE VARISTOR
A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.
BASE METAL ELECTRODES FOR METAL OXIDE VARISTOR
A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.
Multi-function electronic device having memristor and memcapacitor and method for manufacturing the same
The present invention relates to a multi-function electronic device having a memristor and a memcapacitor and a method for manufacturing the same. The multi-function electronic device having a memristor and a memcapacitor has a laminated structure of a first insulating layer comprising an organic material/an active layer/a second insulating layer comprising an organic material, and thus has a resistance and capacitance varying with the applied voltage.
Multi-function electronic device having memristor and memcapacitor and method for manufacturing the same
The present invention relates to a multi-function electronic device having a memristor and a memcapacitor and a method for manufacturing the same. The multi-function electronic device having a memristor and a memcapacitor has a laminated structure of a first insulating layer comprising an organic material/an active layer/a second insulating layer comprising an organic material, and thus has a resistance and capacitance varying with the applied voltage.
LOW LEAKAGE TRANSIENT OVERVOLTAGE PROTECTION CIRCUIT USING A SERIES CONNECTED METAL OXIDE VARISTOR (MOV) AND SILICON CONTROLLED RECTIFIER (SCR)
Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil avalanche diode.
LOW LEAKAGE TRANSIENT OVERVOLTAGE PROTECTION CIRCUIT USING A SERIES CONNECTED METAL OXIDE VARISTOR (MOV) AND SILICON CONTROLLED RECTIFIER (SCR)
Transient overvoltage suppression is provided by discharging through a Metal Oxide Varistor (MOV) and Silicon Controlled Rectifier (SCR) which are connected in series between power supply lines. The SCR has a gate that receives a trigger signal generated by a triggering circuit coupled to the power supply lines. A trigger voltage of the triggering circuit is set by a Transil avalanche diode.
SPARK PLUG AND RESISTOR MATERIAL FOR SPARK PLUG
A spark plug which is capable of further improving load life performance and a resistor material for a spark plug are provided.
A spark plug includes a center electrode, a terminal fitting, and a resistor disposed between the center electrode and the terminal fitting. The resistor contains glass, a zirconia-based material and an electrically conducting material. The zirconia-based material contains at least stabilized zirconia.
SPARK PLUG AND RESISTOR MATERIAL FOR SPARK PLUG
A spark plug which is capable of further improving load life performance and a resistor material for a spark plug are provided.
A spark plug includes a center electrode, a terminal fitting, and a resistor disposed between the center electrode and the terminal fitting. The resistor contains glass, a zirconia-based material and an electrically conducting material. The zirconia-based material contains at least stabilized zirconia.