A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

A thin film magnet (TFM) three-dimensional (3D) inductor structure may include a substrate with conductive vias extending through the substrate. The TFM 3D inductor structure may also include a magnetic thin film layer on at least sidewalls of the conductive vias and on a first side and an opposing second side of the substrate. The TFM 3D inductor structure may further include a first conductive trace directly on the magnetic thin film layer on the first side of the substrate and electrically coupling to at least one of the conductive vias. The TFM 3D inductor structure also includes a second conductive trace directly on the magnetic thin film layer on the second side of the substrate and coupled to at least one of the conductive vias.

A thin film magnet (TFM) three-dimensional (3D) inductor structure may include a substrate with conductive vias extending through the substrate. The TFM 3D inductor structure may also include a magnetic thin film layer on at least sidewalls of the conductive vias and on a first side and an opposing second side of the substrate. The TFM 3D inductor structure may further include a first conductive trace directly on the magnetic thin film layer on the first side of the substrate and electrically coupling to at least one of the conductive vias. The TFM 3D inductor structure also includes a second conductive trace directly on the magnetic thin film layer on the second side of the substrate and coupled to at least one of the conductive vias.

An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

A purpose is to provide an electronic device that can be used as a memory device or a random number generation device capable of outputting a relatively large reading signal, and that can also be used as an oscillation/wave detection device having output/input frequency variability, without requiring an external magnetic field. Provided is an electronic device characterized by including a body, input terminals, and output terminals, in which the body is configured by laminating a spin-torque generation layer and a non-collinear antiferromagnetic layer on a substrate in such an order or in a reverse order in a laminating direction, the input terminals are disposed on both ends of the spin-torque generation layer in any one direction parallel to a lamination surface, and the non-collinear antiferromagnetic layer has a non-collinear magnetic order in a surface formed by said any direction and the laminating direction.

A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.

A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.

The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd.sub.2Fe.sub.14B, a soft magnetic phase contains Fe or Fe.sub.2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe.sub.2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd.sub.2Fe.sub.14B.

Provided herein are systems, methods, and compositions for magnetic nanoparticles and bulk nanocomposite magnets.