A magnetic stack includes a first element including a ferromagnetic layer; a second element including a metal layer able to confer on the assembly formed by the first and the second elements a magnetic anisotropy perpendicular to the plane of the layers. The first element further includes a refractory metal material, the second element being arranged on the first element.

A material may include at least one of Bi.sub.xSe.sub.(1-x), Bi.sub.xTe.sub.(1-x), or Sb.sub.xTe.sub.(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of Bi.sub.xSe.sub.(1-x), Bi.sub.xTe.sub.(1-x), or Sb.sub.xTe.sub.(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.

A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2).sub.n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42 to 54 with respect to the <001> direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.

According to one embodiment, a magnetic device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first nonmagnet, a second nonmagnet, a first ferromagnet between the first nonmagnet and the second nonmagnet, a third nonmagnet including a rare-earth oxide, the second nonmagnet between the first ferromagnet and the third nonmagnet, and a fourth nonmagnet between the second nonmagnet and the third nonmagnet and including a metal.

The invention relates to non-Joulian magnetostriction (NJM) materials comprising transition metals, such as iron alloy magnets with non-Joulian magnetostriction (NJM). The invention also relates to reversibly linear non-dissipative transition metals magnets. The materials are capable of simultaneously large actuation in longitudinal and transverse directions, without simultaneous heat loss. The invention relates as well to methods of making non-Joulian magnetostriction (NJM) materials.

A magnetoresistance element (e.g. a spin valve) for detecting a changing magnetic field includes a pinning layer, pinned layer adjacent to the pinning layer, a spacer layer adjacent to the pinned layer, and a free layer adjacent to the spacer layer and arranged so that the spacer layer is between the pinned layer and the free layer. The pinned layer has a bias with a bias direction configured to reduce an effect of a static field on the detection of the changing magnetic field.