A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

The magnetic sensor can prevent an increase of a positional detection error of a subject/object even in the case of applying an external magnetic field with a magnetic field intensity exceeding a predetermined range. A magnetic sensor is equipped with a magnetoresistive effect element (MR element) 11 that can detect an external magnetic field and a soft magnetic body shield 12. The soft magnetic body shield(s) 12 are/is positioned above and/or below the MR element 11 in a side view, and the size of the MR element 11 is physically included within a perimeter of the soft magnetic body shield 12.

A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure, the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure, and the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms.

A differential magnetoelectric spin-orbit (MESO) logic device is provided where two ports are used to connect the spin orbital module of the MESO device and a ferroelectric capacitor. In some examples, an insulating layer is added to decouple current paths.

Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal comprises Mo, Re or a combination thereof, and a thickness of the ferromagnetic free layer is more than or equal to 1.5 nm and less than 2.5 nm. The ferromagnetic free layer can be applied to a MTJ structure as a single layer, and has sufficient thermal stability for maintaining good magnetic properties after thermal treatment, which makes sure that the MTJ structure can exert normal recording function.

An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and an interface layer and a damping constant enhancing layer interposed between the tunnel barrier layer and the pinned layer, wherein the interface layer may be structured to reduce metal diffusion and the damping constant enhancing layer includes a material having a relatively high damping constant to suppress switching of the magnetization direction of the pinned layer.

A magnetic sensor device having a spin-valve-type magnetoresistive effect element and capable of stably applying a bias magnetic field on the free layer of the magnetoresistive effect element includes a spin-valve-type magnetoresistive effect element, a substrate on which the magnetoresistive effect element is positioned, a power source that supplies a substantially constant electric current applied on the magnetoresistive effect element, and a magnetic field generator that is connected to the electric current path of the electric current applied on the magnetoresistive effect element in series. The magnetic field generator is provided to be capable of applying a bias magnetic field on at least a portion of the magnetoresistive effect element. The magnetic field generator is close to a portion of the magnetoresistive effect element and is positioned at a different level from the substrate.

The disclosed technology relates generally to the field of magnetic devices, in particular to magnetic memory devices or logic devices. The disclosed technology presents a magnetic structure for a magnetic device, wherein the magnetic structure comprises a magnetic reference layer (RL); a spacer provided on the magnetic RL, the spacer comprising a first texture breaking layer provided on the magnetic RL, a magnetic bridge layer provided on the first texture breaking layer, and a second texture breaking layer provided on the magnetic bridge layer. Further, the magnetic structure comprising a magnetic pinned layer (PL) or hard layer (HL) provided on the spacer, wherein the magnetic RL and the magnetic PL or HL are magnetically coupled across the spacer through direct exchange interaction.