Methods and apparatuses are described for communicating primary signals over a high-speed primary channel, the primary signals having a beam pattern having a full lobe at a center of an axis of propagation and communicating auxiliary signals over a low-speed auxiliary channel, the auxiliary signals having a decoupled beam pattern having a null at the center of axis of propagation, the high-speed primary channel and low-speed auxiliary channel operating in full duplex.

A common mode filter includes a body portion including a plurality of external electrodes disposed externally on the body portion, a first filter portion disposed within the body portion and including a plurality of coil electrode layers, and a second filter portion disposed within the body portion and including a plurality of coil electrode layers. The first filter portion and the second filter portion are connected to each other in series, and an area of the plurality of coil electrode layers of the first filter portion and an area of the plurality of coil electrode layers of the second filter portion are different from each other.

A multilayer body includes a first pattern conductor, and first and second via conductors. A first end of the first via conductor is electrically coupled with a second signal electrode, and a second end thereof is electrically coupled with the first pattern conductor. A first end of the second via conductor is electrically coupled with the first pattern conductor. The first pattern conductor extends such that a distance between the second via conductor and a second shield electrode is larger than a distance between the first via conductor and the second shield electrode, a distance between the second via conductor and a third shield electrode is larger than a distance between the first via conductor and the third shield electrode, and a coupling portion between the second via conductor and the first pattern conductor is outside an area of the second signal electrode.

An electronic component includes a device body and first through n-th LC parallel resonators connected in series with each other. The first through n-th LC parallel resonators respectively include first through n-th inductors and first through n-th capacitors. The first through n-th inductors are disposed in a first direction in the device body in this order. The first and n-th inductors are provided with a spiral shape or a helical shape such that they turn around respective winding axes extending along a second direction which is perpendicular or substantially perpendicular or substantially perpendicular or substantially perpendicular to the first direction. At least one of the second through (n−1)-th inductors is provided with a helical shape such that it turns around a winding axis extending along the first direction.

An electronic component includes an upper surface, a lower surface, a side surface, a circuit pattern, and an upper surface shield electrode. The circuit pattern is provided inside the electronic component. The upper surface shield electrode is disposed on the upper surface. In a plan view from a normal direction of the upper surface, a center of gravity of the upper surface shield electrode is spaced from a center of gravity of the upper surface.

A resonant element includes first, second, and third plane electrodes, a first via electrode defining a first inductor, a second inductor, and a third inductor. The first via electrode connects the first plane electrode and the second plane electrode, and each of the second inductor and the third inductor connects the first plane electrode and the third plane electrode. The third plane electrode defines a first capacitor together with the second plane electrode, the second inductor includes second via electrodes, and the third inductor includes third via electrodes. Each of the second via electrodes and the third via electrodes is a columnar conductor extending in the extending direction of the first via electrode.

According to an embodiment, a semiconductor device includes a layer stack including a conductive substrate containing semiconductor material and including a first main surface provided with one or more recesses and a second main surface opposite to the first main surface, a conductive layer covering at least part of the first main surface and side walls and bottom surfaces of the one or more recesses, and a dielectric layer interposed between the conductive substrate and the conductive layer, the conductive layer and a portion of the conductive substrate adjacent to the dielectric layer being an upper electrode and a lower electrode of a capacitor, respectively, an insulating layer provided on the capacitor or on the second main surface, and an inductor provided on the insulating layer at a position of the capacitor.

A low-pass filter includes first to third inductors and a capacitor. A first inductor-forming conductor layer constituting at least a part of each of the first and second inductors and a second inductor-forming conductor layer including first and second portions constituting first and second inductor portions of the third inductor are connected by a plurality of first through holes. The first portion and a capacitor-forming conductor layer constituting a part of the capacitor are connected by a plurality of second through holes. The second portion and the capacitor-forming conductor layer are connected by a plurality of third through holes.

An electronic component including a substrate, a capacitor lower electrode disposed on the substrate, an inorganic dielectric layer disposed on the substrate to cover the lower electrode, a capacitor upper electrode disposed directly on the inorganic dielectric layer and facing the lower electrode via the inorganic dielectric layer, and a coil electrically connected to the lower electrode or the upper electrode. The upper surface of the inorganic dielectric layer is flat.

An electronic component including a substrate, a capacitor lower electrode disposed on the substrate, an inorganic dielectric layer disposed on the substrate to cover the lower electrode, a capacitor upper electrode disposed directly on the inorganic dielectric layer and facing the lower electrode via the inorganic dielectric layer, and a coil disposed on the inorganic dielectric layer and electrically connected to the lower electrode or the upper electrode.