An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An apparatus and method for plating magnetic cores by periodically transferring a plate directly back and forth between a metal plating environment and an insulation deposit environment. This direct metal to insulation to metal plating is enabled by a nano-scale insulation layer that provides an imperfect coverage of the metal layer while still keeping sufficient insulation to prevent eddy current formationeven during high-frequency current applications. Therefore, this invention enables the practical creation of magnetic cores having layers with widths even under one nanometer and can generate cores having a layer scale that can be varied to suit a variety of uses in the microelectronic industry.

An apparatus and method for plating magnetic cores by periodically transferring a plate directly back and forth between a metal plating environment and an insulation deposit environment. This direct metal to insulation to metal plating is enabled by a nano-scale insulation layer that provides an imperfect coverage of the metal layer while still keeping sufficient insulation to prevent eddy current formationeven during high-frequency current applications. Therefore, this invention enables the practical creation of magnetic cores having layers with widths even under one nanometer and can generate cores having a layer scale that can be varied to suit a variety of uses in the microelectronic industry.

Aspects of the present disclosure include systems, structures, circuits, and methods providing planar transformers and planar transformer structures. The planar transformers and transformer structures can include first and second core layers of soft ferromagnetic material on opposite sides of an electrical substrate. First and second coils can be configured as conductive traces disposed on the opposite sides of the substrate. The first and second soft ferromagnetic layers are in contact in a contact region. One or more holes are disposed in either or both of the soft ferromagnetic layers and contain soft ferromagnetic material to reduce reluctance of the transformer structure. The planar transformer can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a gate driver or other high voltage circuit.

Aspects of the present disclosure include systems, structures, circuits, and methods providing planar transformers and planar transformer structures. The planar transformers and transformer structures can include first and second core layers of soft ferromagnetic material on opposite sides of an electrical substrate. First and second coils can be configured as conductive traces disposed on the opposite sides of the substrate. The first and second soft ferromagnetic layers are in contact in a contact region. One or more holes are disposed in either or both of the soft ferromagnetic layers and contain soft ferromagnetic material to reduce reluctance of the transformer structure. The planar transformer can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a gate driver or other high voltage circuit.

Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.

Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.