An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Described herein are inductor devices formed using wafer processing techniques. The inductor devices are singulated and can be mounted into different packages or computing systems. The magnetic material included in the inductor devices have higher aspect ratios (e.g., relatively tall and thin magnetic regions), which may be achieved using electroplating. The electroplated magnetic material is highly concentrated, which enables a higher inductance density.

Described herein are inductor devices formed using wafer processing techniques. The inductor devices are singulated and can be mounted into different packages or computing systems. The magnetic material included in the inductor devices have higher aspect ratios (e.g., relatively tall and thin magnetic regions), which may be achieved using electroplating. The electroplated magnetic material is highly concentrated, which enables a higher inductance density.

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Presented herein is the apparatus and method of stacking magnetic materials with hybrid conductive materials. These methods and apparatus can be used in the formation of PCBs but are not limited to the formation of PCBs. The layer stacks presented within have a layer of conductive hybrid material and at least one layer of magnetic material. In at least one exemplary embodiment, these layers are adjacent in a layer stack, and the magnetic layer is a magnetic hybrid material.

Magnets including a coating and related methods are described herein. The coating may include an aluminum manganese alloy layer. The aluminum manganese alloy layer may be formed in an electroplating process.

A thin coupling inductor, a manufacturing method thereof and a power supply module are provided. The thin coupling inductor comprises a first assembly, a first magnetic core and a second magnetic core; the first assembly comprises a first winding main body, a second winding main body and a third magnetic core combination; and the first magnetic core and the second magnetic core have a thin-layer composite structure. The manufacturing method comprises the steps that a third magnetic core combination and a winding main body are arranged in the frame, and the PP material is pressed to form a stack body. The power supply module comprises a thin coupling inductor, a first switching element, a second switching element, an input capacitor and an output capacitor. The control signals of the first switching element and the second switching element are 180 degrees out of phase.

A thin coupling inductor, a manufacturing method thereof and a power supply module are provided. The thin coupling inductor comprises a first assembly, a first magnetic core and a second magnetic core; the first assembly comprises a first winding main body, a second winding main body and a third magnetic core combination; and the first magnetic core and the second magnetic core have a thin-layer composite structure. The manufacturing method comprises the steps that a third magnetic core combination and a winding main body are arranged in the frame, and the PP material is pressed to form a stack body. The power supply module comprises a thin coupling inductor, a first switching element, a second switching element, an input capacitor and an output capacitor. The control signals of the first switching element and the second switching element are 180 degrees out of phase.