Patent classifications
H01F41/26
Method for fabricating inductors with deposition-induced magnetically-anisotropic cores
A method of fabricating an inductor includes (a) forming a ferromagnetic core on a semiconductor substrate, the ferromagnetic core lying in a core plane and (b) fabricating an inductor coil that winds around the ferromagnetic core, the inductor coil configured to generate an inductor magnetic field that passes through the ferromagnetic core in a first direction parallel to the core plane. While forming the ferromagnetic core, the method further includes (1) generating a bias magnetic field that passes through the ferromagnetic core in a second direction that is orthogonal to the first direction, and (2) inducing a magnetic anisotropy in the ferromagnetic core with the bias magnetic field.
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
Nanocomposite magnetic materials for magnetic devices and systems
Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.
Nanocomposite magnetic materials for magnetic devices and systems
Nanocomposite magnetic materials, methods of manufacturing nanocomposite magnetic materials, and magnetic devices and systems using these nanocomposite magnetic materials are described. A nanocomposite magnetic material can be formed using an electro-infiltration process where nanomaterials (synthesized with tailored size, shape, magnetic properties, and surface chemistries) are infiltrated by electroplated magnetic metals after consolidating the nanomaterials into porous microstructures on planar substrates. The nanomaterials may be considered the inclusion phase, and the magnetic metals may be considered the matrix phase of the multi-phase nanocomposite.
Magnetic conductive NiFe alloys
Embodiments herein describe techniques for a magnetic conductive device including a substrate, an under layer above the substrate, and a magnetic conductive layer including NiFe alloy formed on the under layer. A method for forming a magnetic conductive device includes forming a support stack including an under layer above a substrate, cleaning the support stack, and performing electrodeposition on the under layer by placing the support stack into a plating bath to form NiFe alloy on the under layer. The NiFe alloy includes Ni in a range of about 74% to about 84%, and Fe in a range of about 26% to about 16%. Other embodiments may be described and/or claimed.
Magnetic conductive NiFe alloys
Embodiments herein describe techniques for a magnetic conductive device including a substrate, an under layer above the substrate, and a magnetic conductive layer including NiFe alloy formed on the under layer. A method for forming a magnetic conductive device includes forming a support stack including an under layer above a substrate, cleaning the support stack, and performing electrodeposition on the under layer by placing the support stack into a plating bath to form NiFe alloy on the under layer. The NiFe alloy includes Ni in a range of about 74% to about 84%, and Fe in a range of about 26% to about 16%. Other embodiments may be described and/or claimed.
PLATED COPPER CONDUCTOR STRUCTURES FOR WIRELESS CHARGING SYSTEM AND MANUFACTURE THEREOF
A conductive structure is fabricated on a substrate (either flexible or rigid) by first printing a precursor seed layer of a conductive ink, then electroplating a highly conductive metal such as Cu or Ag onto the precursor. The plated layer has a conductivity approaching that of the bulk metal. To improve the uniformity of plating, an intervening layer of electroless metal may be deposited onto the precursor prior to electroplating. The structure may be used for applications such as coils used in a wireless power transfer system.
PLATED COPPER CONDUCTOR STRUCTURES FOR WIRELESS CHARGING SYSTEM AND MANUFACTURE THEREOF
A conductive structure is fabricated on a substrate (either flexible or rigid) by first printing a precursor seed layer of a conductive ink, then electroplating a highly conductive metal such as Cu or Ag onto the precursor. The plated layer has a conductivity approaching that of the bulk metal. To improve the uniformity of plating, an intervening layer of electroless metal may be deposited onto the precursor prior to electroplating. The structure may be used for applications such as coils used in a wireless power transfer system.
HIGHLY MAGNETICALLY PERMEABLE ALLOY DEPOSITION METHOD FOR MAGNETIC SENSORS
In one example, a method to manufacture a magnetic sensor, comprises providing an electrolyte solution, submersing a substrate in the electrolyte solution, submersing a plurality of ingots in the electrolyte solution, wherein the ingots comprises a metal that is magnetic, and depositing the metal on the substrate by applying a voltage between the metal ingot and the substrate to result in magnetic alloy layer on the substrate. Other examples and related methods are also disclosed herein.