The present invention aims to provide a solar cell in which a decrease in photoelectric conversion efficiency due to continuous exposure to light (photodegradation) is reduced, and a method of producing the solar cell. The present invention relates to a solar cell, including: an electrode; a counter electrode; and a photoelectric conversion layer between the electrode and the counter electrode, the photoelectric conversion layer containing an organic-inorganic perovskite compound represented by the formula R-M-X.sub.3 where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom, the solar cell satisfying the formula (1):
N(T,I)/N(0,I)<5  (1)
where N(0, I) is a carrier density of the organic-inorganic perovskite compound immediately after start of exposure of the solar cell to light at an intensity of I mW/cm.sup.2, and N(T, I) is the carrier density of the organic-inorganic perovskite compound after continuous exposure of the solar cell to light at an intensity of I mW/cm.sup.2 for T hour/hours.

The present invention addresses uniformly formed layers on TCOs with minimized thickness which are hole transporting, due to a hole transport material which is configured for self assembly on the corresponding surface. The layers are formed by a compound made up of at least one kind of molecule according to formula (I) mixed up with a filler molecule FM given by

##STR00001##

where L is a linking fragment, A an anchor group and HTF is a hole transporting fragment. FM (filler molecule) is at least one kind of molecule consisting of an anchoring group, an alkyl chain of N carbon atoms, with N is in the range of 1 to 18, and a functional group of at least on of the group methyl, halogen, amino, bromide, ammonium and sulfuric functional group and where x is in the range of 0.02 to 1 and y equals (1-x).

An organometallic perovskite solar cell and manufacturing process, in particular a solar cell having a lead or tin organometallic photon absorber layer. The organometallic solar cell includes an absorber layer containing a compound which crystallizes in the perovskite crystal lattice and which includes a lithium-free hole conductor layer.

The present invention concerns a method for producing layers of an electronic device and to a method for producing electronic devices. The method comprises co-firing a plurality of different overlapping or superposed films comprising metal oxides, precursors of the aforementioned and/or carbon, in addition to organic components. The method renders the manufacturing process of such electronic devices more efficient.

A flexible photovoltaic device is provided. The flexible photovoltaic device includes a flexible inorganic halide perovskite. The flexible inorganic halide perovskite is free of organic components, has a thickness of greater than or equal to about 1 μm to less than or equal to about 1 nm, and has an average grain size of less than or equal to about 500 nm.

A radiation detector includes a substrate including a first electrode portion, a radiation absorption layer disposed on one side with respect to the substrate and configured of a plurality of perovskite crystals, and a second electrode portion disposed on the one side with respect to the radiation absorption layer and being opposite to the first electrode portion with the radiation absorption layer interposed therebetween. Each of the plurality of perovskite crystals is formed to extend with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a longitudinal direction in a region between the first electrode portion and the second electrode portion in the radiation absorption layer.

A photosensor includes a first electrode, a second electrode that opposes the first electrode, and a photoelectric conversion layer that is disposed between the first electrode and the second electrode and converts incident light into electric charges. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The photoelectric conversion layer contains a perovskite compound. The fluorescence spectrum of the perovskite compound has a first peak at a first wavelength and a second peak at a second wavelength that is longer than the first wavelength. The photoelectric conversion layer is in ohmic contact with each of the first electrode and the second electrode.

The invention relates to a method for synthesis of films made of light-absorbing material with perovskite-like structure which can be used for fabrication of perovskite solar cells. The method for synthesis of films made of light-absorbing material with perovskite-like structure with a structural formula ACB.sub.3 is characterized by sequential deposition of a layer of a reagent C onto a layer of a reagent AB with a thickness determined by stoichiometry of the reaction followed by the immersion of the layers in a liquid or gaseous medium containing reagent B.sub.2 where component A states for CH.sub.3NH.sub.3.sup.+, (NH.sub.2).sub.2CH.sup.+, C(NH.sub.2).sub.3.sup.+, Cs.sup.+ or a mixture thereof, component B states for Cl.sup.−, Br.sup.−, I.sup.− or a mixture thereof, component C states for metals Sn, Pb, Bi, or their melts, oxides, salts. The technical result achieved using the claimed invention is a simple and fast method for fabrication of a layer of light-absorbing organic-inorganic material with a perovskite-like structure which is homogeneous due to the formation of a film of the intermediate phase AB-B.sub.2 with improved morphology on the surfaces of a large area due to rapid crystallization, which allows the obtained material to be used in solar cells of large area.

The present invention provides: a layered perovskite that has a high band gap energy and an excellent carrier transport capacity; a light absorption layer containing the layered perovskite; a light-absorption-layer-equipped substrate and a photoelectric conversion element that have the light absorption layer; and a solar cell having the photoelectric conversion element. In the layered perovskite according to present invention, the inter-surface distance of (002) planes calculated from an X-ray diffraction peak obtained by an out-of-plane method is 2.6 to 5.0 nm, and, in the X-ray diffraction peak, an intensity ratio ((111) plane/(002) plane) of an X-ray diffraction peak intensity at a (111) plane with respect to an X-ray diffraction peak intensity at the (002) plane is 0.03 or more.

A manufacturing method of a composite photovoltaic structure including a step of forming a transparent electrode material, a step of forming a first photovoltaic unit, a step of forming a first insulation layer, a step of forming a first transparent conductive layer, a step of forming a second photovoltaic unit, a step of forming a second insulation layer, a step of forming a second transparent conductive layer and a step of splitting a product. Thus, the manufacturing method of the composite photovoltaic structure has a photoelectric reaction area of a significantly improved omnidirectional concentration gain, an efficiently induced current and a low manufacturing cost, without affecting the whole structure thickness.