The present application discloses stilbene derivative compounds and phenyl-benzofuran compositions, useful in the manufacture of dye-sensitized solar cells and other similar technology.

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

A solar cell module includes: a solar cell module body and a print layer formed further toward a light-receiving surface side than the solar cell module body by printing with specific transparency in a specific region. A rear surface side is visible from the light-receiving surface side in at least part of the specific region. The specific transparency is set to satisfy a condition that spectral sensitivity integral ratio A defined by formula (1) below is not less than a specific value A* that the spectral sensitivity integral ratio A takes when printing is performed with transparency resulting in a short circuit current ratio of 0.6. λ is wavelength (nm), f(λ) is quantum efficiency IPCE (%) in a case in which the print layer is formed, and f.sub.SC(λ) is quantum efficiency IPCE (%) in a case in which the print layer is not formed.

[00001]$\begin{array}{cc}A=\frac{{\int }_{360}^{830}\left(f\left(\lambda \right)\right)d\lambda }{{\int }_{360}^{830}\left(f_{\mathrm{SC}}\left(\lambda \right)\right)d\lambda }& \mathrm{Formula}\left(1\right)\end{array}$

The disclosure provides an efficient and stable inorganic lead-free perovskite solar cell and a method for preparing the same. The solar cell includes a conductive substrate, a PEDOT: PSS layer, an inorganic lead-free CsSnI.sub.3 perovskite layer, a C60 layer, a BCP layer, and a metal counter electrode layer arranged in order from bottom to top, wherein the inorganic lead-free CsSnI.sub.3 perovskite layer is a CsSnI.sub.3 perovskite layer passivated by a thioureas small-molecule organic compound.

The present invention relates to a slurry for forming a semiconductor electrode layer to obtain a dye-sensitized solar cell containing a porous layer, which is not susceptible to cracking and is capable of providing a higher conversion efficiency. The slurry for forming a semiconductor electrode layer contains two types of metal-oxide semiconductor particles having different particle sizes. When a semiconductor electrode layer is formed by coating and sintering such a slurry, cracking seldom occurs and a higher conversion efficiency is achieved when it is made into a film with a thickness of 3˜20 μm.

A simple, one-step method for producing a homogenous CeO.sub.2—TiO.sub.2 composite thin film using aerosol-assisted chemical vapor deposition (“CVD”) of a solution containing triacetatocerium (III) and tetra isopropoxytitanium (IV) on a fluorine-doped tin oxide (“FTO”) substrate at a temperature ranging from about 500 to about 650° C. Methods for using the film produced by this method.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

The present invention provides a hybrid ferroelectric discotic liquid crystal solar cell by incorporating an electrolyte composition for improving power conversion efficiency of the solar cell. The hybrid ferroelectric (FE) discotic liquid crystal solar cell comprises a first layer of n-type inorganic semiconductor deposited on conductive fluorine doped tin oxide (FTO) glass plate 101, a second thin layer of light absorbing inorganic sensitizer 103; wherein the inorganic sensitizer strained titania FTO glass-plate acts as a photo anode, a third layer of ferroelectric discotic liquid crystal electrolyte 104 applied between the photo anode and a photo cathode and a fourth layer of reflective platinum deposited FTO glass-plate 105 configured to act as the photo cathode. The ferroelectric discotic liquid crystal electrolyte composition comprises of an achiral HAT6 discotic molecule (2,3,6,7,10,11-Hexakis-hexyloxy triphenylene) and at least two additives, wherein the additives includes tertiary butyl pyridine (t-bPy) and lithium bis(trifluoromethylsulphonyl)imide Li[CF3SO2]2N.

A solar cell 100 includes a substrate 1, a first electrode 6, an electron transport layer 2, a first photoelectric conversion layer 3, and a coating layer 5. The first photoelectric conversion layer 3 is disposed between the first electrode 6 and the substrate 1. The substrate 1 has a first main surface and a second main surface, and the second main surface has an uneven structure. The electron transport layer 2 has a first main surface and a second main surface, and the first main surface and the second main surface each have an uneven structure. The first photoelectric conversion layer 3 has a first main surface and a second main surface. The second main surface of the substrate 1 faces the first main surface of the electron transport layer 2.

Disclosed herein are methods of annealing a perovskite layer, comprising irradiating the perovskite layer with a light source, wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λ.sub.max) of the perovskite layer, thereby annealing the perovskite layer. Also disclosed herein are semiconducting devices and articles of manufacture comprising an annealed perovskite layer made by any of the methods described herein, such as solar cells, light-emitting diodes, photodetectors, thin-film transistors, and combinations thereof.