The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1+n2+n3 may equal 1.

Provided is a semiconductor element that can generate power with high efficiency and has high durability. A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a second photoactive layer including silicon; a second doped layer; a passivation layer; and a second electrode in this order. The interlayer interface existing between the first photoactive layer and the adjacent layer is a substantially smooth surface, and the multilayer junction photoelectric conversion element further includes a light scattering layer that penetrate a part of the passivation layer and electrically join the second doped layer and the second electrode. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided.

A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

The present invention relates to a tandem solar cell which comprises: a perovskite solar cell comprising a perovskite absorption layer; a silicon solar cell placed under the perovskite solar cell; a junction layer placed between the perovskite solar cell and the silicon solar cell; an upper electrode placed on the perovskite solar cell; and a lower electrode placed under the silicon solar cell.

Provided herein are dyes, dye-sensitized solar cells, and sequential series multijunction dye-sensitized solar cell devices. The dyes include an electron deficient acceptor moiety, a medium electron density π-bridge moiety, and an electron rich donor moiety comprising a biaryl, a substituted biaryl, or an R.sup.1, R.sup.2, R.sup.3 substituted phenyl where each of R.sup.1, R.sup.2, and R.sup.3 independently comprises H, aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, OR.sup.4, N(R.sup.5).sub.2, or a combination thereof; each R.sup.4 independently comprises H, alkyl, aryl, alkyl substituted aryl, alkoxy substituted aryl, or a combination thereof; and each R.sup.5 independently comprises aryl, multiaryl, alkyl substituted aryl, alkoxy substituted aryl, alkyl substituted multiaryl, alkoxy substituted multiaryl, or a combination thereof. The solar cells include a glass substrate, a dye-sensitized active layer, and a redox shuttle. The devices include at least two dye-sensitized solar cells connected in series.

A wireless self-charging power pack including a solution processed conductive thin film integrating a solar cell with a solid-state supercapacitor. Additionally, a method of forming a wireless self-charging power pack including integrating a solar cell with a solid-state supercapacitor by forming a layer of conductive thin film between the solar cell and the solid-state supercapacitor through solution processing of the material forming the conductive thin film.

The present disclosure provides a tandem, 4-terminal, silicon-perovskite solar device. The device may comprise a silicon solar cell having a first band gap; a glass sheet covering the silicon solar cell, wherein the glass sheet comprises a top surface and a bottom surface; and a perovskite solar cell having a second band gap, wherein the perovskite solar cell is deposited on the bottom surface of the glass sheet.

An organometallic perovskite solar cell and manufacturing process, in particular a solar cell having a lead or tin organometallic photon absorber layer. The organometallic solar cell includes an absorber layer containing a compound which crystallizes in the perovskite crystal lattice and which includes a lithium-free hole conductor layer.

A manufacturing method of a composite photovoltaic structure including a step of forming a transparent electrode material, a step of forming a first photovoltaic unit, a step of forming a first insulation layer, a step of forming a first transparent conductive layer, a step of forming a second photovoltaic unit, a step of forming a second insulation layer, a step of forming a second transparent conductive layer and a step of splitting a product. Thus, the manufacturing method of the composite photovoltaic structure has a photoelectric reaction area of a significantly improved omnidirectional concentration gain, an efficiently induced current and a low manufacturing cost, without affecting the whole structure thickness.