The process comprises treating 90-190 g titanium (IV) chloride in 10-100 ml de-ionized water for preparing Titanium cation (Ti.sup.4+); treating 130-275 ml potassium persulfate in 10-100 ml double-distilled water and keeping at constant temperature to obtain sulphate/oxide; dipping substrates into titanium (IV) chloride solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any; dipping substrates into potassium persulfate solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any, and keeping at 50-90° C. for complete one cycle; treating obtained Titanium cation (Ti.sup.4+) with sulphate/oxide and obtaining whitish layer on the substrate surface by necked eyes after about 10-15 cycles, suggesting initiation of film formation, wherein the deposition thickness of TiO.sub.2 layer is increased from 0.3-2.0-micron on determined 5-50 deposition cycles; and rinsing deposited films with de-ionized water and air annealed at 400-600° C. temperature to obtain anatase TiO.sub.2.

The process comprises treating 90-190 g titanium (IV) chloride in 10-100 ml de-ionized water for preparing Titanium cation (Ti.sup.4+); treating 130-275 ml potassium persulfate in 10-100 ml double-distilled water and keeping at constant temperature to obtain sulphate/oxide; dipping substrates into titanium (IV) chloride solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any; dipping substrates into potassium persulfate solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any, and keeping at 50-90° C. for complete one cycle; treating obtained Titanium cation (Ti.sup.4+) with sulphate/oxide and obtaining whitish layer on the substrate surface by necked eyes after about 10-15 cycles, suggesting initiation of film formation, wherein the deposition thickness of TiO.sub.2 layer is increased from 0.3-2.0-micron on determined 5-50 deposition cycles; and rinsing deposited films with de-ionized water and air annealed at 400-600° C. temperature to obtain anatase TiO.sub.2.

The present invention relates to the field of electrode material of a low temperature resistant supercapacitor, and in particular to a nickel foam-supported defective tricobalt tetroxide nanomaterial, a low temperature resistant supercapacitor and a preparation method thereof. The method includes the following steps: dissolving cobalt acetate in an ethylene glycol solution and stirring uniformly to obtain a pink transparent solution; adding hexadecyl trimethyl ammonium bromide to the pink transparent solution, and stirring until the hexadecyl trimethyl ammonium bromide dissolves to obtain a mixed solution; putting the mixed solution into a teflon-lined reactor, adding pretreated nickel foam for hydrothermal reaction, taking out the nickel foam after the reaction is completed, and ultrasonic cleaning the nickel foam repeatedly before drying; and heat-treating the nickel foam obtained after drying. The defective tricobalt tetroxide (D-Co.sub.3O.sub.4) grown on the nickel foam prepared by the present invention still has a high specific capacity at a low temperature, and the assembled supercapacitor can withstand low temperature, and thus has great application prospects.

The present invention relates to the field of electrode material of a low temperature resistant supercapacitor, and in particular to a nickel foam-supported defective tricobalt tetroxide nanomaterial, a low temperature resistant supercapacitor and a preparation method thereof. The method includes the following steps: dissolving cobalt acetate in an ethylene glycol solution and stirring uniformly to obtain a pink transparent solution; adding hexadecyl trimethyl ammonium bromide to the pink transparent solution, and stirring until the hexadecyl trimethyl ammonium bromide dissolves to obtain a mixed solution; putting the mixed solution into a teflon-lined reactor, adding pretreated nickel foam for hydrothermal reaction, taking out the nickel foam after the reaction is completed, and ultrasonic cleaning the nickel foam repeatedly before drying; and heat-treating the nickel foam obtained after drying. The defective tricobalt tetroxide (D-Co.sub.3O.sub.4) grown on the nickel foam prepared by the present invention still has a high specific capacity at a low temperature, and the assembled supercapacitor can withstand low temperature, and thus has great application prospects.

The preparation method according to the present disclosure is to easily prepare hexagonal molybdenum oxide (h-MoO.sub.3) having a nanorod shape even in a low temperature precipitation reaction at atmospheric pressure without applying hydrothermal synthesis under high temperature and high pressure conditions. The hexagonal molybdenum oxide (h-MoO.sub.3) nanorods prepared therefrom can be properly mixed with carbon-based conductive materials such as carbon nanofiber, and thus can be usefully used as an anode material for a pseudocapacitor.

The preparation method according to the present disclosure is to easily prepare hexagonal molybdenum oxide (h-MoO.sub.3) having a nanorod shape even in a low temperature precipitation reaction at atmospheric pressure without applying hydrothermal synthesis under high temperature and high pressure conditions. The hexagonal molybdenum oxide (h-MoO.sub.3) nanorods prepared therefrom can be properly mixed with carbon-based conductive materials such as carbon nanofiber, and thus can be usefully used as an anode material for a pseudocapacitor.

A sensor-on-clamp device for use in a drilling system, the clamp being a tool joint clamp and houses one or more sensors mounted to the tool joint clamp, a power source and sensor data transmitting means. One or more sensors for use in a drilling system, said sensors being powerable by a single commercially available, replaceable battery.

An object of the present invention is to provide an aluminum foil and an aluminum member for electrodes having good adhesiveness to an electrode material and high conductivity with the electrode material. Provided is an aluminum foil having through holes including an aluminum oxide film having a thickness of 25 nm or less on a surface of the aluminum foil, and further a hydrophilic layer on a part of a surface of the aluminum oxide film.

An object of the present invention is to provide an aluminum foil and an aluminum member for electrodes having good adhesiveness to an electrode material and high conductivity with the electrode material. Provided is an aluminum foil having through holes including an aluminum oxide film having a thickness of 25 nm or less on a surface of the aluminum foil, and further a hydrophilic layer on a part of a surface of the aluminum oxide film.

Described are energy storage devices employing a gas storage structure, which can accommodate or store gas evolved from the energy storage device. The energy storage device comprises an electrochemical cell with electrodes comprising metal-containing compositions, like metal oxides, metal nitrides, or metal hydrides, and a solid state electrolyte.