A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.

A method for fabricating an electron field emission cathode, the field emission cathode including a substrate having a field emission material layer engaged therewith, where the field emission material incorporates a carbon nanotube material and a metal oxide. The field emission material is produced via a sol-gel process to improve field emission characteristics of the field emission cathode and field emission cathode devices implementing such cathodes.

The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

The present invention relates to large area field emission devices based on the incorporation of macroscopic, microscopic, and nanoscopic field enhancement features and a designed forced current sharing matrix layer to enable a stable high-current density long-life field emission device. The present invention pertains to a wide range of field emission sources and is not limited to a specific field emission technology. The invention is described as an X-ray electron source but can be applied to any application requiring a high current density electron source.

A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.

A method for making a carbon nanotube field emitter is provided. A carbon nanotube film is dealed with a carbon nanotube film in a circumstance with a temperature ranged from 1400 to 1800 C. and a pressure ranged from 40 to 60 MPa to form at least one first carbon nanotube structure. The at least one first carbon nanotube structure is heated to graphitize the at least one first carbon nanotube structure to form at least one second carbon nanotube structure. At least two electrodes is welded to fix one end of the at least one second carbon nanotube structure between adjacent two electrodes to form a field emission preparation body. The field emission preparation body has a emission end. The emission end is bonded to form a carbon nanotube field emitter.

A method for making a carbon nanotube field emitter is provided. A carbon nanotube film is dealed with a carbon nanotube film in a circumstance with a temperature ranged from 1400 to 1800 C. and a pressure ranged from 40 to 60 MPa to form at least one first carbon nanotube structure. The at least one first carbon nanotube structure is heated to graphitize the at least one first carbon nanotube structure to form at least one second carbon nanotube structure. At least two electrodes is welded to fix one end of the at least one second carbon nanotube structure between adjacent two electrodes to form a field emission preparation body. The field emission preparation body has a emission end. The emission end is bonded to form a carbon nanotube field emitter.

A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.

A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.

The purpose of the present invention is to provide an emitter that is made of hafnium carbide (Hf) and that releases electrons in a stable and highly efficient manner, a method for manufacturing the emitter, and an electron gun and electronic device in which the emitter is used.

In this nanowire-equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the <100> crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} face surrounding the (200) face.