In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

A vacuum field-emission-transistor device, a drain comprised of either a metal or a semimetal material, a gate arranged adjacent to, but separated from, the drain, a source comprised of either a metal or a semimetal material adjacent to, but separated from the metal gate, and a void through the metal drain and the metal gate to expose the drain, wherein the distance between the drain and the source is shorter than a mean free path distance of electrons in air.

A vacuum field-emission-transistor device, a drain comprised of either a metal or a semimetal material, a gate arranged adjacent to, but separated from, the drain, a source comprised of either a metal or a semimetal material adjacent to, but separated from the metal gate, and a void through the metal drain and the metal gate to expose the drain, wherein the distance between the drain and the source is shorter than a mean free path distance of electrons in air.

The utility model discloses a circuit for inhibiting single-ended analogue signal noises and a terminal accessory. The circuit includes an input interface module, a differential amplification module, an analogue signal processing module, an isolation module and a control module, wherein the input interface module at least includes an analogue signal line and a digital signal line, the differential amplification module includes differential input ends and an output end; the analogue signal line and the digital signal line of the input interface module are respectively connected to the differential input ends of the differential amplification module, so that the analogue signal line and the digital signal line form a pseudo-differential pair, and the output end of the differential amplification module is connected to the analogue signal processing module; the digital signal line is further connected to the isolation module, and the isolation module is further connected to the control module.

The utility model discloses a circuit for inhibiting single-ended analogue signal noises and a terminal accessory. The circuit includes an input interface module, a differential amplification module, an analogue signal processing module, an isolation module and a control module, wherein the input interface module at least includes an analogue signal line and a digital signal line, the differential amplification module includes differential input ends and an output end; the analogue signal line and the digital signal line of the input interface module are respectively connected to the differential input ends of the differential amplification module, so that the analogue signal line and the digital signal line form a pseudo-differential pair, and the output end of the differential amplification module is connected to the analogue signal processing module; the digital signal line is further connected to the isolation module, and the isolation module is further connected to the control module.

A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

A field emission transistor includes a gate, a fold over emitter, and fold over collector. The emitter and the collector are separated from the gate by a void and are separated from a gate contact by gate contact dielectric. The void may be a vacuum, ambient air, or a gas. Respective ends of the emitter and the collector are separated by a gap. Electrons are drawn across gap from the emitter to the collector by an electrostatic field created when a voltage is applied to the gate. The emitter and collector include a first conductive portion substantially parallel with gate and a second conductive portion substantially perpendicular with gate. The second conductive portion may be formed by bending a segment of the first conductive portion. The second conductive portion is folded inward from the first conductive portion towards the gate. Respective second conductive portions are generally aligned.

A vacuum tube for amplifier circuit includes: a light incidence window that transmits signal light; a photoelectric conversion unit that converts the signal light transmitted through the light incidence window into photoelectrons; an output unit that has an anode, on which the photoelectrons are incident, and outputs a signal corresponding to the incident photoelectrons; and a grid electrode that is disposed in a path of the photoelectrons from the photoelectric conversion unit to the anode and controls the amount of photoelectrons incident on the anode.